Self-Excited Thermoacoustic Instability Behavior of a Hedge Premixed Combustion System with an Asymmetric Air/Fuel Supply or Combustion Condition
Du, Yongbo, Zhang, Yuanhang, Li, Xiaojin, Zhang, Jingkun, Da, Yaodong, Jia, Yun, Che, Defu
Published in Applied sciences (01.10.2023)
Published in Applied sciences (01.10.2023)
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A novel 3D CoNiCu-LDH@CuO micro-flowers on copper foam as efficient electrocatalyst for overall water splitting
Li, Qi, Bi, Jiaojiao, Yao, Yuchao, Li, Xiaojin, Xu, Dongyan
Published in Applied surface science (15.06.2023)
Published in Applied surface science (15.06.2023)
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Novel Reconfigurable Field-Effect Transistor With Arch-Shaped Gate to Improve On-State Current
Hu, Junfeng, Sun, Yabin, Liu, Ziyu, Li, Xiaojin, Shi, Yanling
Published in IEEE transactions on electron devices (01.10.2023)
Published in IEEE transactions on electron devices (01.10.2023)
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A novel split-gate trench MOSFET embedded with a high-k pillar for higher breakdown voltage
Huang, Li, Li, Xiaojin, Sun, Yabin, Shi, Yanling
Published in Semiconductor science and technology (01.03.2024)
Published in Semiconductor science and technology (01.03.2024)
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Journal Article
Novel Reconfigurable Field-Effect Transistor With Asymmetric Spacer Engineering at Drain Side
Yao, Yan, Sun, Yabin, Li, Xiaojin, Shi, Yanling, Liu, Ziyu
Published in IEEE transactions on electron devices (01.02.2020)
Published in IEEE transactions on electron devices (01.02.2020)
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Journal Article
Vertically Stacked Nanosheets Tree-Type Reconfigurable Transistor With Improved ON-Current
Sun, Yabin, Li, Xianglong, Liu, Ziyu, Liu, Yun, Li, Xiaojin, Shi, Yanling
Published in IEEE transactions on electron devices (01.01.2022)
Published in IEEE transactions on electron devices (01.01.2022)
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Journal Article
Electronic Assessment of Novel Arch-Shaped Asymmetrical Reconfigurable Field-Effect Transistor
Li, Xianglong, Sun, Yabin, Li, Xiaojin, Shi, Yanling, Liu, Ziyu
Published in IEEE transactions on electron devices (01.04.2020)
Published in IEEE transactions on electron devices (01.04.2020)
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Journal Article
Impact of Process Variation on Nanosheet Gate-All-Around Complementary FET (CFET)
Yang, Xiaoqiao, Li, Xianglong, Liu, Ziyu, Sun, Yabin, Liu, Yun, Li, Xiaojin, Shi, Yanling
Published in IEEE transactions on electron devices (01.07.2022)
Published in IEEE transactions on electron devices (01.07.2022)
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Journal Article
3-D Modeling of Fringe Gate Capacitance in Complementary FET (CFET)
Yang, Xiaoqiao, Sun, Yabin, Liu, Ziyu, Liu, Yun, Li, Xiaojin, Shi, Yanling
Published in IEEE transactions on electron devices (01.11.2022)
Published in IEEE transactions on electron devices (01.11.2022)
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Journal Article
Novel 3-D Fin-RFET With Dual-Doped Source/Drain to Improve ON-State Current
Zhang, Rui, Yang, Yimin, Sun, Yabin, Liu, Ziyu, Liu, Yun, Li, Xiaojin, Shi, Yanling
Published in IEEE transactions on electron devices (01.12.2022)
Published in IEEE transactions on electron devices (01.12.2022)
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Journal Article
Novel Reconfigurable Transistor With Extended Source/Drain Beyond 3 nm Technology Node
Ye, Hongbo, Hu, Junfeng, Liu, Ziyu, Wang, Chao, Li, Xiaojin, Shi, Yanling, Mao, Zhigang, Sun, Yabin
Published in IEEE transactions on electron devices (01.04.2024)
Published in IEEE transactions on electron devices (01.04.2024)
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Journal Article
Novel Reconfigurable Field-Effect Transistor With Surrounded Source/Drain to Improve On-State Current
Hu, Junfeng, Wang, Chao, Sun, Yabin, Liu, Ziyu, Li, Xiaojin, Shi, Yanling
Published in IEEE transactions on electron devices (01.01.2024)
Published in IEEE transactions on electron devices (01.01.2024)
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Journal Article
Image Segmentation Based on Improved Unet
Li, Xiaojin, Qian, Wenhua, Xu, Dan, Liu, Chunyu
Published in Journal of physics. Conference series (01.02.2021)
Published in Journal of physics. Conference series (01.02.2021)
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Journal Article
Impact of Process Fluctuations on RF Small-Signal Parameter of Gate-All-Around Nanosheet Transistor Beyond 3 nm Node
Sun, Yabin, Gao, Hengbin, Li, Xianglong, Yang, Xiaoqiao, Liu, Ziyu, Liu, Yun, Li, Xiaojin, Shi, Yanling
Published in IEEE transactions on electron devices (01.01.2022)
Published in IEEE transactions on electron devices (01.01.2022)
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