Flexible n-type thermoelectric materials by organic intercalation of layered transition metal dichalcogenide TiS2
Wan, Chunlei, Gu, Xiaokun, Dang, Feng, Itoh, Tomohiro, Wang, Yifeng, Sasaki, Hitoshi, Kondo, Mami, Koga, Kenji, Yabuki, Kazuhisa, Snyder, G. Jeffrey, Yang, Ronggui, Koumoto, Kunihito
Published in Nature materials (01.06.2015)
Published in Nature materials (01.06.2015)
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Gene-Activated Matrix with Self-Assembly Anionic Nano-Device Containing Plasmid DNAs for Rat Cranial Bone Augmentation
Hara, Masahito, Sumita, Yoshinori, Kodama, Yukinobu, Iwatake, Mayumi, Yamamoto, Hideyuki, Shido, Rena, Narahara, Shun, Ogaeri, Takunori, Sasaki, Hitoshi, Asahina, Izumi
Published in Materials (22.11.2021)
Published in Materials (22.11.2021)
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Fabrication of freestanding m-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an m-plane sapphire substrate
Sasaki, Hitoshi, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Usui, Akira
Published in Journal of crystal growth (01.05.2009)
Published in Journal of crystal growth (01.05.2009)
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Conference Proceeding
Effect of aluminum carbide buffer layer on growth and self-separation of m -plane GaN by hydride vapor phase epitaxy
Sasaki, Hitoshi, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Usui, Akira
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
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Conference Proceeding
Precise Measurement of a 20-V Programmable Josephson Voltage Standard System
Yamada, Takahiro, Yamamori, Hirotake, Sasaki, Hitoshi, Shoji, Akira
Published in Japanese Journal of Applied Physics (01.07.2009)
Published in Japanese Journal of Applied Physics (01.07.2009)
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Journal Article
Effect of Aluminum Source on Hydrothermal Synthesis of High-Silica Mordenite in Fluoride Medium, and It's Thermal Stability
Lu, Baowang, Tsuda, Tomohiro, Sasaki, Hitoshi, Oumi, Yasunori, Itabashi, Keiji, Teranishi, Toshiharu, Sano, Tsuneji
Published in Chemistry of materials (27.01.2004)
Published in Chemistry of materials (27.01.2004)
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Journal Article
Buffer breakdown voltage of AlGaN/GaN HFET on a 4 inch Si(111) substrate grown by MOCVD
Iwami, Masayuki, Kato, Sadahiro, Satoh, Yoshihiro, Sasaki, Hitoshi, Yoshida, Seikoh
Published in Physica status solidi. C (01.06.2007)
Published in Physica status solidi. C (01.06.2007)
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Neuron attachment properties of carbon negative-ion implanted bioabsorbable polymer of poly-lactic acid
Tsuji, Hiroshi, Sasaki, Hitoshi, Sato, Hiroko, Gotoh, Yasuhito, Ishikawa, Junzo
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.05.2002)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.05.2002)
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Investigation of Surface Pits Originating in Dislocations in AlGaN/GaN Epitaxial Layer Grown on Si Substrate with Buffer Layer
Sasaki, Hitoshi, Kato, Sadahiro, Matsuda, Takeyoshi, Sato, Yoshihiro, Iwami, Masayuki, Yoshida, Seikoh
Published in Japanese Journal of Applied Physics (01.04.2006)
Published in Japanese Journal of Applied Physics (01.04.2006)
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Journal Article
Extracellular matrix absorption properties of negative ion-implanted polystyrene, polydimethylsiloxane and poly-lactic acid
Tsuji, Hiroshi, Sasaki, Hitoshi, Utsumi, Yasuhiro, Sato, Hiroko, Gotoh, Yasuhito, Ishikawa, Junzo
Published in Surface & coatings technology (01.09.2002)
Published in Surface & coatings technology (01.09.2002)
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C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE
Kato, Sadahiro, Satoh, Yoshihiro, Sasaki, Hitoshi, Masayuki, Iwami, Yoshida, Seikoh
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Journal Article
Conference Proceeding
Temperature dependence of the electrical resistivity of molten silicon
SASAKI, H, IKARI, A, TERASHIMA, K, KIMURA, S
Published in Japanese Journal of Applied Physics (1995)
Published in Japanese Journal of Applied Physics (1995)
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Density variation of molten silicon measured by an improved archimedian method
SASAKI, H, TOKIZAKI, E, TERASHIMA, K, KIMURA, S
Published in Japanese Journal of Applied Physics (1994)
Published in Japanese Journal of Applied Physics (1994)
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Journal Article
Oxygen solubilities in Si melt : influence of Sb addition
HUANG, X, TERASHIMA, K, SASAKI, H, TOKIZAKI, E, KIMURA, S
Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP (01.09.1993)
Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP (01.09.1993)
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Analysis of deposits evaporated from Sb-doped Si melts
HUANG, X, TERASHIMA, K, TOKIZAKI, E, SASAKI, H, KIMURA, S
Published in Japanese Journal of Applied Physics (1994)
Published in Japanese Journal of Applied Physics (1994)
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