One Transistor-One Resistor Devices for Polymer Non-Volatile Memory Applications
Kim, Tae-Wook, Choi, Hyejung, Oh, Seung-Hwan, Wang, Gunuk, Kim, Dong-Yu, Hwang, Hyunsang, Lee, Takhee
Published in Advanced materials (Weinheim) (26.06.2009)
Published in Advanced materials (Weinheim) (26.06.2009)
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Journal Article
An electrically modifiable synapse array of resistive switching memory
Choi, Hyejung, Jung, Heesoo, Lee, Joonmyoung, Yoon, Jaesik, Park, Jubong, Seong, Dong-jun, Lee, Wootae, Hasan, Musarrat, Jung, Gun-Young, Hwang, Hyunsang
Published in Nanotechnology (26.08.2009)
Published in Nanotechnology (26.08.2009)
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Journal Article
Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications
Yoon, Jaesik, Lee, Joonmyoung, Choi, Hyejung, Park, Ju-Bong, Seong, Dong-jun, Lee, Wootae, Cho, Chunhum, Kim, Seonghyun, Hwang, Hyunsang
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Journal Article
Conference Proceeding
Electro-Thermal Model for Thermal Disturbance in Cross-Point Phase-Change Memory
Yoo, Sijung, Lee, Hyung Dong, Lee, Seungyun, Choi, Hyejung, Kim, Taehoon
Published in IEEE transactions on electron devices (01.04.2020)
Published in IEEE transactions on electron devices (01.04.2020)
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Journal Article
Charge loss behavior of manos-type flash memory cell with different levels of charge injection
Man Chang, Minseok Jo, Hasan, M., Seonghyun Kim, Yongkyu Ju, Seungjae Jung, Hyejung Choi, Hyunsang Hwang
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
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Conference Proceeding
The effect of Sr concentration on resistive switching properties of La1−xSrxMnO3 films
Choi, Sun Gyu, Lee, Hong-Sub, Choi, Hyejung, Chung, Sung-Woong, Park, Hyung-Ho
Published in Thin solid films (01.02.2013)
Published in Thin solid films (01.02.2013)
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Journal Article
Conference Proceeding
Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure
Kim, Tae-Wook, Choi, Hyejung, Oh, Seung-Hwan, Jo, Minseok, Wang, Gunuk, Cho, Byungjin, Kim, Dong-Yu, Hwang, Hyunsang, Lee, Takhee
Published in Nanotechnology (14.01.2009)
Published in Nanotechnology (14.01.2009)
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Journal Article
Improvement of interface quality by post-annealing on silicon nanowire MOSFETdevices with multi-wire channels
KIM, Seonghyun, JO, Minseok, JUNG, Seungjae, CHOI, Hyejung, LEE, Joonmyoung, MAN CHANG, CHO, Chunhum, HWANG, Hyunsang
Published in Microelectronic engineering (01.03.2011)
Published in Microelectronic engineering (01.03.2011)
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Journal Article
Memory characteristics of a self-assembled monolayer of Pt nanoparticles as a charge trapping layer
Choi, Hyejung, Choi, Byung-Sang, Kim, Tae-Wook, Jung, Seung-Jae, Chang, Man, Lee, Takhee, Hwang, Hyunsang
Published in Nanotechnology (30.07.2008)
Published in Nanotechnology (30.07.2008)
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Journal Article
Effect of metal ions on the switching performance of polyfluorene-based organic non-volatile memory devices
Kim, Tae-Wook, Oh, Seung-Hwan, Lee, Joonmyoung, Choi, Hyejung, Wang, Gunuk, Park, Jubong, Kim, Dong-Yu, Hwang, Hyunsang, Lee, Takhee
Published in Organic electronics (2010)
Published in Organic electronics (2010)
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Journal Article
The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applications
Lee, Joonmyoung, Choi, Hyejung, Seong, Dong-jun, Yoon, Jaesik, Park, Jubong, Jung, Seungjae, Lee, Wootae, Chang, Man, Cho, Chunhum, Hwang, Hyunsang
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Journal Article
Data retention characteristics of MANOS-type flash memory device with different metal gates at various levels of charge injection
Chang, Man, Kim, Tae-Wook, Lee, Joonmyoung, Jo, Minseok, Kim, Seonghyun, Jung, Seungjae, Choi, Hyejung, Lee, Takhee, Hwang, Hyunsang
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Journal Article
Conference Proceeding
Hybrid charge trap memory device with TaN nanocrystals formed by phase separation methods
Hyejung Choi, Seung-Jae Jung, Hokyung Park, Joon-Myung Lee, Moonjae Kwon, Man Chang, Hasan, M., Hyunsang Hwang
Published in 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop (01.08.2007)
Published in 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop (01.08.2007)
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Conference Proceeding
Improvement of memory properties for MANOS-type nonvolatile memory devices with high-pressure wet vapor annealing
Chang, Man, Hasan, Musarrat, Jung, Seungjae, Park, Hokyung, Jo, Minseok, Choi, Hyejung, Kwon, Moonjae, Hwang, Hyunsang, Choi, Sangmoo
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Journal Article
Conference Proceeding
Azo compound and polymer containing same
SHIN MYOUNG YOUP, KIM WON-JUNG, HYEJUNG CHOI, CHEON HWAN SUNG, BEOM JOO JUN
Year of Publication 27.07.2016
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Year of Publication 27.07.2016
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