Photoluminescence wavelength dependence on layer structure of GaP/AlP modulated superlattices
KIM, J. H, ASAHI, H, DOI, K, ASAMI, K, GONDA, S.-I
Published in Japanese Journal of Applied Physics (01.08.1996)
Published in Japanese Journal of Applied Physics (01.08.1996)
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Journal Article
Gas source molecular beam epitaxy growth of GaN on C-, A-, R- and M-plane sapphire and silica glass substrates
IWATA, K, ASAHI, H, ASAMI, K, KUROIWA, R, GONDA, S.-I
Published in Japanese Journal of Applied Physics (01.06.1997)
Published in Japanese Journal of Applied Physics (01.06.1997)
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Journal Article
High quality GaN growth on (0001) sapphire by ion-removed electron cyclotron resonance molecular beam epitaxy and first observation of (2×2) and (4×4) reflection high energy electron diffraction patterns
IWATA, K, ASAHI, H, YU, S. J, ASAMI, K, FUJITA, H, FUSHIDA, M, GONDA, S.-I
Published in Japanese Journal of Applied Physics (01.03.1996)
Published in Japanese Journal of Applied Physics (01.03.1996)
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Journal Article
Proton Radiation Effects in High-Power GaInP/AlGaInP Semiconductor Lasers
Gonda, S.-i., Tsutsumi, H., Ito, Y., Kume, K., Ishigami, R., Makino, T., Morita, T., Kan, H.
Published in 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials (01.05.2007)
Published in 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials (01.05.2007)
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Conference Proceeding
Very low resistance ohmic contacts to n-GaN
HWE JAE LEE, SOON JAE YU, ASAHI, H, GONDA, S.-I, YOUNG HWAN KIM, JIN KOO RHEE, NOH, S. J
Published in Journal of electronic materials (01.07.1998)
Published in Journal of electronic materials (01.07.1998)
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Journal Article
TlGaP layers grown on GaAs substrates by gas source molecular beam epitaxy
FUSHIDA, M, ASAHI, H, YAMAMOTO, K, KOH, I, ASAMI, K, GONDA, S.-I, OE, K
Published in Japanese Journal of Applied Physics (01.06.1997)
Published in Japanese Journal of Applied Physics (01.06.1997)
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Journal Article
Gas source molecular beam epitaxy growth of GaN-rich side of GaNP alloys and their observation by scanning tunneling microscopy
KUROIWA, R, ASAHI, H, IWATA, K, KIM, S.-J, NOH, J.-H, ASAMI, K, GONDA, S.-I
Published in Japanese Journal of Applied Physics (01.06.1997)
Published in Japanese Journal of Applied Physics (01.06.1997)
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Conference Proceeding
Journal Article
Scanning tunneling microscopy/spectroscopy study of self-organized quantum dot structures formed in GaP/InP short-period superlattices
NOH, J.-H, ASAHI, H, KIM, S.-J, GONDA, S.-I
Published in Japanese Journal of Applied Physics (01.06.1997)
Published in Japanese Journal of Applied Physics (01.06.1997)
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Conference Proceeding
Journal Article
MOMBE growth of GaSb and InAsSb using triethylstibine and triethylarsine
Kaneko, Tadaaki, Asahi, Hajime, Itani, Yasushi, Okuno, Yasutoshi, Gonda, Shun-ichi
Published in Journal of crystal growth (01.05.1991)
Published in Journal of crystal growth (01.05.1991)
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Conference Proceeding
Scanning tunneling microscopy/scanning tunneling spectroscopy observation of III-V compound semiconductor nanostructures
NOH, J.-H, ASAHI, H, KIM, S.-J, TAKEMOTO, M, GONDA, S.-I
Published in Japanese Journal of Applied Physics (01.06.1996)
Published in Japanese Journal of Applied Physics (01.06.1996)
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Conference Proceeding
Journal Article
Surface diffusion lengths of Ga molecules during GaAs MOMBE (metalorganic molecular beam epitaxy) growth
Okuno, Yasutoshi, Asahi, Hajime, Kaneko, Tadaaki, Kang, Tae Won, Gonda, Shun-ichi
Published in Journal of crystal growth (01.10.1990)
Published in Journal of crystal growth (01.10.1990)
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Conference Proceeding
Gas source MEE growth of InGaAs/InP superlattices
Asahi, Hajime, Kohara, Teruaki, Soni, Ravi Kant, Takeyasu, Nobuyuki, Asami, Kumiko, Emura, Shuichi, Gonda, Shun-ichi
Published in Applied surface science (1992)
Published in Applied surface science (1992)
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Conference Proceeding
Optical properties of atomically controlled InGaAs/InP quantum well structures
Asahi, Hajime, Ijuin, Hachiro, Kohara, Teruaki, Asami, Kumiko, Watanabe, Hiromichi, Gonda, Shun-ichi
Published in Applied surface science (01.01.1994)
Published in Applied surface science (01.01.1994)
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Conference Proceeding
Gas source MEE (migration enhanced epitaxy) growth of InP
Takeyasu, Nobuyuki, Asahi, Hajime, Yu, Soon Jae, Asami, Kumiko, Kaneko, Tadaaki, Gonda, Shun-ichi
Published in Journal of crystal growth (01.05.1991)
Published in Journal of crystal growth (01.05.1991)
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Conference Proceeding
Substrate orientation dependence of optical properties of GaP/AlP short-period superlattices
DOI, K, ASAHI, H, KIM, J. H, ASAMI, K, GONDA, S.-I
Published in Japanese Journal of Applied Physics (01.11.1996)
Published in Japanese Journal of Applied Physics (01.11.1996)
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