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The STI stress effect on deep submicron PDSOI MOSFETs
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卜建辉 李书振 罗家俊 韩郑生
Published in
Journal of semiconductors
(01.03.2014)
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engineering
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physics
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devices
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metal oxide semiconductors
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microelectronics
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mosfet
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mosfets
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nmos
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AUTh Library subscriptions: IOP Publishing
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