Introducing crystalline rare-earth oxides into Si technologies
Osten, H. J., Laha, A., Czernohorsky, M., Bugiel, E., Dargis, R., Fissel, A.
Published in Physica status solidi. A, Applications and materials science (01.04.2008)
Published in Physica status solidi. A, Applications and materials science (01.04.2008)
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Journal Article
MBE-grown Si and Si1−xGex quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device
Manna, S, Aluguri, R, Katiyar, A, Das, S, Laha, A, Osten, H J, Ray, S K
Published in Nanotechnology (20.12.2013)
Published in Nanotechnology (20.12.2013)
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Journal Article
Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy
Tetzlaff, D., Wietler, T.F., Bugiel, E., Osten, H.J.
Published in Journal of crystal growth (01.09.2013)
Published in Journal of crystal growth (01.09.2013)
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Journal Article
Conference Proceeding
Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si(1 1 1) substrates: a diffraction study
Wang, J X, Laha, A, Fissel, A, Schwendt, D, Dargis, R, Watahiki, T, Shayduk, R, Braun, W, Liu, T M, Osten, H J
Published in Semiconductor science and technology (01.04.2009)
Published in Semiconductor science and technology (01.04.2009)
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Journal Article
Photonic crystals for highly efficient silicon single junction solar cells
Krügener, J., Rienäcker, M., Schäfer, S., Sanchez, M., Wolter, S., Brendel, R., John, S., Osten, H.J., Peibst, R.
Published in Solar energy materials and solar cells (01.12.2021)
Published in Solar energy materials and solar cells (01.12.2021)
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Journal Article
Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(111)
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Journal Article
Conference Proceeding
Embedding silicon nanoclusters into epitaxial rare earth oxide for nonvolatile memory applications
Laha, Apurba, Kühne, D, Bugiel, E, Fissel, A, Osten, H J
Published in Semiconductor science and technology (01.08.2008)
Published in Semiconductor science and technology (01.08.2008)
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Journal Article
Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy
Barnscheidt, Y, Schmidt, J, Wetzel, G, Tetzlaff, D, Wietler, T F, Osten, H J
Published in Semiconductor science and technology (01.10.2018)
Published in Semiconductor science and technology (01.10.2018)
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Journal Article
Growth of crystalline praseodymium oxide on silicon
Osten, H.J, Liu, J.P, Bugiel, E, Müssig, H.J, Zaumseil, P
Published in Journal of crystal growth (01.02.2002)
Published in Journal of crystal growth (01.02.2002)
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Journal Article
Epitaxial growth of praseodymium oxide on silicon
Osten, H.J, Liu, J.P, Bugiel, E, Müssig, H.J, Zaumseil, P
Published in Materials science & engineering. B, Solid-state materials for advanced technology (19.12.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (19.12.2001)
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Journal Article
Conference Proceeding
Growth and properties of strained Si1-x-yGexCy layers
Jain, S C, Osten, H J, Dietrich, B, Rucker, H
Published in Semiconductor science and technology (01.10.1995)
Published in Semiconductor science and technology (01.10.1995)
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Journal Article
Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide
Laha, Apurba, Bugiel, E, Jestremski, M, Ranjith, R, Fissel, A, Osten, H J
Published in Nanotechnology (25.11.2009)
Published in Nanotechnology (25.11.2009)
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Journal Article
Comparison of SiGe and SiGe:C heterojunction bipolar transistors
KNOLL, D, HEINEMANN, B, EHWALD, K.-E, TILLACK, B, SCHLEY, P, OSTEN, H. J
Published in Thin solid films (03.07.2000)
Published in Thin solid films (03.07.2000)
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Conference Proceeding
Journal Article
Epitaxial multi-component rare earth oxide for high-K application
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Journal Article
Conference Proceeding
Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy
FISSEL, A, DARGIS, R, BUGIEL, E, SCHWENDT, D, WIETLER, T, KRÜGENER, J, LAHA, A, OSTEN, H. J
Published in Thin solid films (26.02.2010)
Published in Thin solid films (26.02.2010)
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Conference Proceeding
Journal Article
Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys
Hattab, A, Perrossier, J.L, Meyer, F, Barthula, M, Osten, H.J, Griesche, J
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
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Journal Article
Conference Proceeding
Dopant diffusion control by adding carbon into Si and SiGe: principles and device application
Osten, H.J, Knoll, D, Rücker, H
Published in Materials science & engineering. B, Solid-state materials for advanced technology (19.12.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (19.12.2001)
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Conference Proceeding