InGaAs material, MOS device provided with InGaAs material-based channel, and preparation method thereof
SONG JIANJUN, REN YUAN, XUAN RONGXI, ZHANG HEMING, HU HUIYONG, SHU BIN, JIANG DAOFU
Year of Publication 09.03.2018
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Year of Publication 09.03.2018
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Dual-intrinsic Ge barrier layer GeSn alloy PIN photodetector and preparation method thereof
SONG JIANJUN, XUAN RONGXI, MIAO YUANHAO, ZHANG HEMING, HU HUIYONG, SHU BIN, JIANG DAOFU
Year of Publication 09.03.2018
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Year of Publication 09.03.2018
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PMOS device based on direct band gap modified Ge channel and preparation method for the same
SONG JIANJUN, XUAN RONGXI, MIAO YUANHAO, ZHANG HEMING, HU HUIYONG, JIANG DAOFU
Year of Publication 05.01.2018
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Year of Publication 05.01.2018
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Direct band gap Ge channel NMOS device with SiGec introduced stress and preparation method for the same
SONG JIANJUN, XUAN RONGXI, ZHANG HEMING, HU HUIYONG, JIANG DAOFU, WU YIFEI
Year of Publication 05.01.2018
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Year of Publication 05.01.2018
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Compressive-strain Si CMOS device based on channel crystal orientation selection and preparation method thereof
SONG JIANJUN, XUAN RONGXI, MIAO YUANHAO, ZHANG HEMING, HU HUIYONG, JIANG DAOFU
Year of Publication 22.12.2017
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Year of Publication 22.12.2017
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Band-gag-modified Ge material and preparation method thereof
REN YUAN, SONG JIANJUN, XUAN RONGXI, ZHANG HEMING, HU HUIYONG, JIANG DAOFU
Year of Publication 12.10.2016
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Year of Publication 12.10.2016
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