METHOD FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, WAFER INCLUDING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, AND GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE
OKUNO KOJI, NAKADA NAOYUKI, SAITO YOSHIKI, USHIDA YASUHISA, BOYAMA SHINYA, NITTA SHUGO
Year of Publication 29.07.2010
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Year of Publication 29.07.2010
Patent
GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, WAFER HAVING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR FORMED THEREON, AND GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR ELEMENT
OKUNO KOJI, NAKADA NAOYUKI, SAITO YOSHIKI, USHIDA YASUHISA, BOYAMA SHINYA, NITTA SHUGO
Year of Publication 05.12.2013
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Year of Publication 05.12.2013
Patent
Method for producing group III nitride-based compound semiconductor, wafer including group III nitride-based compound semiconductor, and group III nitrided-based compound semiconductor device
OKUNO KOJI, NAKADA NAOYUKI, SAITO YOSHIKI, USHIDA YASUHISA, BOYAMA SHINYA, NITTA SHUGO
Year of Publication 27.08.2013
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Year of Publication 27.08.2013
Patent