Process stability of deuterium-annealed MOSFET's
Clark, W.F., Ference, T.G., Hook, T.B., Watson, K.M., Mittl, S.W., Burnham, J.S.
Published in IEEE electron device letters (01.01.1999)
Published in IEEE electron device letters (01.01.1999)
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Journal Article
The combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET's
Ference, T.G., Burnham, J.S., Clark, W.F., Hook, T.B., Mittl, S.W., Watson, K.M., Liang-Kai Kevin Han
Published in IEEE transactions on electron devices (01.04.1999)
Published in IEEE transactions on electron devices (01.04.1999)
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Journal Article