Verfahren zur Erzeugung einer feinen Struktur in einem Halbleitersubstrat und Resistzusammensetzung hierfür
MOON, JOO-TAE, CHOI, SANG-JUN, KANG, YOOL, CHUNG, JEONG-HEE, WOO, SANG-GYUN
Year of Publication 27.12.2012
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Year of Publication 27.12.2012
Patent
Halbleiterspeichervorrichtungen mit versetzten aktiven Regionen
MOON, JOO-TAE, GOO, DOO-HOON, CHO, HAN-KU, WOO, SANG-GYUN, YEO, GI-SUNG, BAEK, KYOUNG-YUN
Year of Publication 20.12.2007
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Year of Publication 20.12.2007
Patent
Semiconductor memory device e.g. Dynamic RAM, has substrate with active regions in slots, and field separation layer provided at substrate and surrounding regions, where regions in adjacent slots are displaced in direction of one of axes
MOON, JOO-TAE, GOO, DOO-HOON, CHO, HAN-KU, WOO, SANG-GYUN, YEO, GI-SUNG, BAEK, KYOUNG-YUN
Year of Publication 13.04.2006
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Year of Publication 13.04.2006
Patent
Production of fine structure in semiconductor substrates involves coating a target layer with a resist containing a crosslinker, forming a photoresist by lithography and then heating to crosslink and form narrower holes
MOON, JOO-TAE, CHOI, SANG-JUN, KANG, YOOL, CHUNG, JEONG-HEE, WOO, SANG-GYUN
Year of Publication 26.10.2000
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Year of Publication 26.10.2000
Patent