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Characteristics of ALD Tungsten Nitride Using B2H6, WF6, and NH3 and Application to Contact Barrier Layer for DRAM

by Kim, Soo-Hyun, Kim, Jun-Ki, Lee, Ju Hee, Kwak, Nohjung, Kim, Jinwoong, Jung, Sung-Hoon, Hong, Mi-Ran, Lee, Sang Hyeob, Collins, Josh, Sohn, Hyunchul
Published in Journal of the Electrochemical Society (2007)

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A Comparative Study of the Atomic-Layer-Deposited Tungsten Thin Films as Nucleation Layers for W-Plug Deposition

by Kim, Soo-Hyun, Kwak, Nohjung, Kim, Jinwoong, Sohn, Hyunchul
Published in Journal of the Electrochemical Society (2006)

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Phase and Microstructure of ALD-W Films Deposited Using B[sub 2]H[sub 6] and WF[sub 6] and Their Effects on CVD-W Growth

by Kim, Soo-Hyun, Yeom, Seung-Jin, Kwak, Nohjung, Sohn, Hyunchul
Published in Journal of the Electrochemical Society (2008)

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Characteristics of Cobalt Films Deposited by Metal Organic Chemical Vapor Deposition Method Using Dicobalt Hexacarbonyl tert-Butylacetylene

by Lee, Keunwoo, Park, Taeyong, Lee, Jaesang, Kim, Jinwoo, Kim, Jeongtae, Kwak, Nohjung, Yeom, Seungjin, Jeon, Hyeongtag
Published in Japanese Journal of Applied Physics (01.07.2008)

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Journal Article

Characteristics of ALD Tungsten Nitride Using B2H6, WF6, and NH3 and Application to Contact Barrier Layer for DRAM

A Comparative Study of the Atomic-Layer-Deposited Tungsten Thin Films as Nucleation Layers for W-Plug Deposition

Phase and Microstructure of ALD-W Films Deposited Using B[sub 2]H[sub 6] and WF[sub 6] and Their Effects on CVD-W Growth

Characteristics of Cobalt Films Deposited by Metal Organic Chemical Vapor Deposition Method Using Dicobalt Hexacarbonyl tert-Butylacetylene

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