Porous silicon: material properties, visible photo- and electroluminescence
Bomchil, G., Halimaoui, A., Sagnes, I., Badoz, P.A., Berbezier, I., Perret, P., Lambert, B., Vincent, G., Garchery, L., Regolini, J.L.
Published in Applied surface science (01.01.1993)
Published in Applied surface science (01.01.1993)
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Journal Article
Conference Proceeding
Conduction band discontinuity and electron mobility in a strained Si/SiGe heterostructure
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Journal Article
Conference Proceeding
Si/SiGe valence band offset determination using photoluminescence and DLTS in SiGe quantum-well MOS capacitors
Gamez-Cuatzin, H, Daami, A, Garchery, L, Sagnes, I, Campidelli, Y, Brémond, G
Published in Microelectronic engineering (01.08.1998)
Published in Microelectronic engineering (01.08.1998)
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Journal Article
Conference Proceeding
Thermal emission of holes from confined levels in strained SiGe channel p-MOSFETS
Gámez-Cuatzin, H., Marchand, J.-J., Brémond, G., Garchery, L., Campidelli, Y., Berenguer, M.
Published in Thin solid films (15.02.1997)
Published in Thin solid films (15.02.1997)
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Journal Article
Electron mobility enhancement in a strained Si channel
Garchery, L., Sagnes, I., Warren, P., Dupuy, J.-C., Badoz, P.A.
Published in Journal of crystal growth (01.12.1995)
Published in Journal of crystal growth (01.12.1995)
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Conference Proceeding
Collective excitations of electron disks in laterally patterned Si/SiGe modulation-doped heterojunctions
Zanier, S, Guldner, Y, Berroir, J.M, Vieren, J.P, Faini, G, Cambril, E, Garchery, L, Campidelli, Y, Sagnes, I
Published in Thin solid films (15.02.1997)
Published in Thin solid films (15.02.1997)
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Journal Article
Single-Wafer, SiGe Heterostructures Grown by Cold Wall UHV-CVD: Application to Hetero-Junction Bipolar Transistor (HBT) Fabrication
Glowacki, F., Campidelli, Y., Garchery, L., Gruhle, A.
Published in ESSDERC '94: 24th European Solid State Device Research Conference (01.09.1994)
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Published in ESSDERC '94: 24th European Solid State Device Research Conference (01.09.1994)
Conference Proceeding