Electrical properties of bulk silicon dioxide and SiO sub(2)/Si interface formed by tetraethylorthosilicate (TEOS)-oxygen plasma enhanced chemical vapor deposition
Kim, Hyo-Uk, Rhee, Shi-Woo
Published in Journal of materials science. Materials in electronics (01.11.2000)
Published in Journal of materials science. Materials in electronics (01.11.2000)
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