SILICON GERMANIUM BIPOLAR TRANSISTOR
CHU JACK OON, DUNN JAMES STUART, SCHONENBERG KATHRYN TURNER, JOHNSON ROBB ALLEN, COOLBAUGH DOUGLAS DUANE, WUTHRICH RYAN WAYNE, JAGANNATHAN BASANTH, GREENBERG DAVID, HARAME DAVID, LANZEROTTI LOUIS
Year of Publication 30.09.2009
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Year of Publication 30.09.2009
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Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
Chu, Jack Oon, Coolbaugh, Douglas Duane, Dunn, James Stuart, Greenberg, David R, Harame, David L, Jagannathan, Basanth, Johnson, Robb Allen, Lanzerotti, Louis D, Schonenberg, Kathryn Turner, Wuthrich, Ryan Wayne
Year of Publication 11.05.2010
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Year of Publication 11.05.2010
Patent
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
CHU JACK OON, HARAME DAVID L, DUNN JAMES STUART, LANZEROTTI LOUIS D, SCHONENBERG KATHRYN TURNER, JOHNSON ROBB ALLEN, COOLBAUGH DOUGLAS DUANE, WUTHRICH RYAN WAYNE, GREENBERG DAVID R, JAGANNATHAN BASANTH
Year of Publication 11.05.2010
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Year of Publication 11.05.2010
Patent
METHOD OF MANUFACTURING SILICON GERMANIUM BIPOLAR TRANSISTOR
CHU JACK OON, DUNN JAMES STUART, SCHONENBERG KATHRYN TURNER, JOHNSON ROBB ALLEN, COOLBAUGH DOUGLAS DUANE, WUTHRICH RYAN WAYNE, JAGANNATHAN BASANTH, GREENBERG DAVID, HARAME DAVID, LANZEROTTI LOUIS
Year of Publication 03.07.2008
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Year of Publication 03.07.2008
Patent
INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYER TO ENHANCE YIELD FOR Si-Ge BIPOLAR TECHNOLOGY
HARAME DAVID L, DUNN JAMES STUART, LANZEROTTI LOUIS D, SCHONENBERG KATHRYN TURNER, CHU JACK OOH, JOHNSON ROBB ALLEN, COOLBAUGH DOUGLAS DUANE, WUTHRICH RYAN WAYNE, GREENBERG DAVID R, JAGANNATHAN BASANTH
Year of Publication 29.05.2008
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Year of Publication 29.05.2008
Patent
Epitaxial base bipolar transistor with raised extrinsic base
Dunn, James Stuart, Harame, David L, Johnson, Jeffrey Bowman, Johnson, Robb Allen, Lanzerotti, Louis DeWolf, St. Onge, Stephen Arthur
Year of Publication 02.11.2004
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Year of Publication 02.11.2004
Patent
Silicon germanium bipolar transistor
CHU JACK OON, HARAME DAVID L, DUNN JAMES STUART, JOHNSON ROBB ALLEN, COOLBAUGH DOUGLAS DUANE, GREENBERG DAVID R, JAGANNATHAN BASANTH
Year of Publication 02.06.2004
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Year of Publication 02.06.2004
Patent
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
Chu, Jack Oon, Coolbaugh, Douglas Duane, Dunn, James Stuart, Greenberg, David R, Harame, David L, Jagannathan, Basanth, Johnson, Robb Allen, Lanzerotti, Louis D, Schonenberg, Kathryn Turner, Wuthrich, Ryan Wayne
Year of Publication 06.02.2007
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Year of Publication 06.02.2007
Patent
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
CHU JACK OON, HARAME DAVID L, DUNN JAMES STUART, LANZEROTTI LOUIS D, SCHONENBERG KATHRYN TURNER, JOHNSON ROBB ALLEN, COOLBAUGH DOUGLAS DUANE, WUTHRICH RYAN WAYNE, GREENBERG DAVID R, JAGANNATHAN BASANTH
Year of Publication 06.02.2007
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Year of Publication 06.02.2007
Patent
Epitaxial base bipolar transistor with raised extrinsic base
JOHNSON JEFFREY BOWMAN, HARAME DAVID L, DUNN JAMES STUART, JOHNSON ROBB ALLEN, ST. ONGE STEPHEN ARTHUR, LANZEROTTI LOUIS DEWOLF
Year of Publication 02.11.2004
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Year of Publication 02.11.2004
Patent
SILICON GERMANIUM BIPOLAR TRANSISTOR
CHU JACK OON, DUNN JAMES STUART, SCHONENBERG KATHRYN TURNER, JOHNSON ROBB ALLEN, COOLBAUGH DOUGLAS DUANE, WUTHRICH RYAN WAYNE, JAGANNATHAN BASANTH, GREENBERG DAVID, HARAME DAVID, LANZEROTTI LOUIS
Year of Publication 02.11.2004
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Year of Publication 02.11.2004
Patent
Epitaxial base bipolar transistor with raised extrinsic base
JOHNSON JEFFREY BOWMAN, ST,. ONGE STEPHEN ARTHUR, HARAME DAVID L, DUNN JAMES STUART, JOHNSON ROBB ALLEN, LANZEROTTI LOUIS DEWOLF
Year of Publication 30.10.2003
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Year of Publication 30.10.2003
Patent