Understanding Strain-Induced Drive-Current Enhancement in Strained-Silicon n-MOSFET and p-MOSFET
Flachowsky, Stefan, Wei, Andy, Illgen, Ralf, Herrmann, Tom, Höntschel, Jan, Horstmann, Manfred, Klix, Wilfried, Stenzel, Roland
Published in IEEE transactions on electron devices (01.06.2010)
Published in IEEE transactions on electron devices (01.06.2010)
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Journal Article
Channel Engineering for Nanotransistors in a Semiempirical Quantum Transport Model
Wulf, Ulrich, Kučera, Jan, Richter, Hans, Horstmann, Manfred, Wiatr, Maciej, Höntschel, Jan
Published in Mathematics (Basel) (22.11.2017)
Published in Mathematics (Basel) (22.11.2017)
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Journal Article
Improving Accuracy and Precision of Strain Analysis by Energy-Filtered Nanobeam Electron Diffraction
Hähnel, Angelika, Reiche, Manfred, Moutanabbir, Oussama, Blumtritt, Horst, Geisler, Holm, Höntschel, Jan, Engelmann, Hans-Jürgen
Published in Microscopy and microanalysis (01.02.2012)
Published in Microscopy and microanalysis (01.02.2012)
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Journal Article
Spacer integration methods and resulting devices
PETER BAARS, GEORGE ROBERT MULFINGER, HONTSCHEL JAN, HANS-JURGEN THEES, RYAN SPORER, RICK J. CARTER
Year of Publication 01.12.2017
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Year of Publication 01.12.2017
Patent
DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPACER WIDTHS & DUAL RAISED SOURCE DRAIN EXPITAXIAL SILICON AND TRIPLE-NITRIDE SPACER INTEGRATION ENABLING HIGH-VOLTAGE EG DEVICE ON FDSOI
THEES, Hans-Jürgen, MULFINGER, George Robert, SPORER, Ryan, BAARS, Peter, CARTER, Rick J, HÖNTSCHEL, Jan
Year of Publication 12.03.2020
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Year of Publication 12.03.2020
Patent
Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dial raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI
Mulfinger, George Robert, Thees, Hans-Jürgen, Sporer, Ryan, Carter, Rick J, Baars, Peter, Höntschel, Jan
Year of Publication 31.12.2019
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Year of Publication 31.12.2019
Patent
DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPACER WIDTHS & DUAL RAISED SOURCE DRAIN EXPITAXIAL SILICON AND TRIPLE-NITRIDE SPACER INTEGRATION ENABLING HIGH-VOLTAGE EG DEVICE ON FDSOI
MULFINGER George Robert, THEES Hans-Jürgen, HÖNTSCHEL Jan, CARTER Rick J, SPORER Ryan, BAARS Peter
Year of Publication 11.01.2018
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Year of Publication 11.01.2018
Patent
DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPACER WIDTHS & DUAL RAISED SOURCE DRAIN EXPITAXIAL SILICON AND TRIPLE-NITRIDE SPACER INTEGRATION ENABLING HIGH-VOLTAGE EG DEVICE ON FDSOI
MULFINGER George Robert, THEES Hans-Jürgen, HÖNTSCHEL Jan, CARTER Rick J, SPORER Ryan, BAARS Peter
Year of Publication 16.11.2017
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Year of Publication 16.11.2017
Patent
Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI
Thees Hans-Jürgen, Carter Rick J, Höntschel Jan, Sporer Ryan, Mulfinger George Robert, Baars Peter
Year of Publication 31.10.2017
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Year of Publication 31.10.2017
Patent