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Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations
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徐昊 杨红 罗维春 徐
烨峰 王
艳蓉 唐波 王文武 祁路伟 李俊峰 闫江 朱慧珑 赵超 陈大鹏 叶甜春
Published in
Chinese physics B
(01.08.2016)
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Journal Article
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physics
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capping
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computer simulation
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dielectric breakdown
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gates
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high-k metal gate
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interface trap density
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IOP Electronic Journals
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