An improved electron and hole mobility model for general purpose device simulation
Darwish, M.N., Lentz, J.L., Pinto, M.R., Zeitzoff, P.M., Krutsick, T.J., Hong Ha Vuong
Published in IEEE transactions on electron devices (01.09.1997)
Published in IEEE transactions on electron devices (01.09.1997)
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Journal Article
Use of transient enhanced diffusion to tailor boron out-diffusion
Vuong, H.-H., Xie, Y.-H., Frei, M.R., Hobler, G., Pelaz, L., Rafferty, C.S.
Published in IEEE transactions on electron devices (01.07.2000)
Published in IEEE transactions on electron devices (01.07.2000)
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Journal Article
Sidegating in a GaAs MBE-grown HFET structure
Vuong, T.H.H., Gibson, W.C., Ahrens, R.E., Parsey, J.M.
Published in IEEE transactions on electron devices (01.01.1990)
Published in IEEE transactions on electron devices (01.01.1990)
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Journal Article
Impact of interface impurities on heterostructure field-effect transistors
Reynolds, C.L., Vuong, H.H.T., Peticolas, L.J.
Published in IEEE transactions on electron devices (01.11.1992)
Published in IEEE transactions on electron devices (01.11.1992)
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