Silicate dissolution boosts the CO2 concentrations in subduction fluids
Tumiati, S., Tiraboschi, C., Sverjensky, D. A., Pettke, T., Recchia, S., Ulmer, P., Miozzi, F., Poli, S.
Published in Nature communications (20.09.2017)
Published in Nature communications (20.09.2017)
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Journal Article
Design and commissioning of a high magnetic field muon spin relaxation spectrometer at the ISIS pulsed neutron and muon source
Lord, J S, McKenzie, I, Baker, P J, Blundell, S J, Cottrell, S P, Giblin, S R, Good, J, Hillier, A D, Holsman, B H, King, P J C, Lancaster, T, Mitchell, R, Nightingale, J B, Owczarkowski, M, Poli, S, Pratt, F L, Rhodes, N J, Scheuermann, R, Salman, Z
Published in Review of scientific instruments (01.07.2011)
Published in Review of scientific instruments (01.07.2011)
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Journal Article
Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs
Poli, S., Pala, M.G., Poiroux, T., Deleonibus, S., Baccarani, G.
Published in IEEE transactions on electron devices (01.11.2008)
Published in IEEE transactions on electron devices (01.11.2008)
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Journal Article
Single-crystal X-ray diffraction and resonant X-ray magnetic scattering at helium-3 temperatures in high magnetic fields at beamline P09 at PETRA III
Francoual, S., Strempfer, J., Warren, J., Liu, Y., Skaugen, A., Poli, S., Blume, J., Wolff-Fabris, F., Canfield, P. C., Lograsso, T.
Published in Journal of synchrotron radiation (01.09.2015)
Published in Journal of synchrotron radiation (01.09.2015)
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Journal Article
Computational Study of the Ultimate Scaling Limits of CNT Tunneling Devices
Poli, S., Reggiani, S., Gnudi, A., Gnani, E., Baccarani, G.
Published in IEEE Transactions on Electron Devices (01.01.2008)
Published in IEEE Transactions on Electron Devices (01.01.2008)
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Book Review
Journal Article
Design and tests of 500kW RF windows for the ITER LHCD system
Hillairet, J., Kim, J., Faure, N., Achard, J., Bae, Y.S., Bernard, J.M., Delpech, L., Goniche, M., Larroque, S., Magne, R., Marfisi, L., Park, S., Poli, S., Dechambre, N., Vulliez, K.
Published in Fusion engineering and design (01.05.2015)
Published in Fusion engineering and design (01.05.2015)
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Journal Article
Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insight
Poli, S., Reggiani, S., Baccarani, G., Gnani, E., Gnudi, A., Denison, M., Pendharkar, S., Wise, R.
Published in Solid-state electronics (01.11.2011)
Published in Solid-state electronics (01.11.2011)
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Journal Article
Conference Proceeding
Control and readout of current-induced magnetic flux quantization in a superconducting transformer
Kerner, C, Hackens, B, Golubović, D S, Poli, S, Faniel, S, Magnus, W, Schoenmaker, W, Bayot, V, Maes, H
Published in Superconductor science & technology (01.02.2009)
Published in Superconductor science & technology (01.02.2009)
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Journal Article
Numerical investigation of the total SOA of trench field-plate LDMOS devices
Poli, S, Reggiani, S, Baccarani, G, Gnani, E, Gnudi, A, Denison, M, Pendharkar, S, Wise, R
Published in 2010 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2010)
Published in 2010 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2010)
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Conference Proceeding
The Tore Supra Front Steering Long Pulse ECRH Antenna. Past Experience - Present Evolution - Future Experiments
Lennholm, M, Bouquey, F, Chantant, M, Chappuis, P, Clary, J, Darbos, C, Doceul, L, Faisse, F, Jung, M, Lambert, R, Magne, R, Montecot, A, Poli, S, Roux, D, Samaille, F, Traisnel, E, Villedieu, E
Published in Journal of physics. Conference series (01.01.2005)
Published in Journal of physics. Conference series (01.01.2005)
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Journal Article
TCAD Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors
Reggiani, S., Barone, G., Poli, S., Gnani, E., Gnudi, A., Baccarani, G., Ming-Yeh Chuang, Weidong Tian, Wise, R.
Published in IEEE transactions on electron devices (01.02.2013)
Published in IEEE transactions on electron devices (01.02.2013)
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Journal Article
Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors
Reggiani, S., Poli, S., Denison, M., Gnani, E., Gnudi, A., Baccarani, G., Pendharkar, S., Wise, R.
Published in IEEE transactions on electron devices (01.09.2011)
Published in IEEE transactions on electron devices (01.09.2011)
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Journal Article
A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs
Cresti, A., Pala, M. G., Poli, S., Mouis, M., Ghibaudo, G.
Published in IEEE transactions on electron devices (01.08.2011)
Published in IEEE transactions on electron devices (01.08.2011)
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