Effect of substrate polishing on the growth of graphene on 3C-SiC(111) Si(111) by high temperature annealing
Gupta, B, Di Bernardo, I, Mondelli, P, Della Pia, A, Betti, M G, Iacopi, F, Mariani, C, Motta, N
Published in Nanotechnology (06.05.2016)
Published in Nanotechnology (06.05.2016)
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