Silicon germanium heterojunction bipolar transistor electrostatic discharge power clamps and the Johnson Limit in RF BICMOS SiGe technology
Voldman, Steven H, Ronan, Brian, Juliano, Patrick A, Botula, Alan, Hui, David T, Lanzerotti, Louis D
Published in Journal of electrostatics (01.10.2002)
Published in Journal of electrostatics (01.10.2002)
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Journal Article
Foundation of rf CMOS and SiGe BiCMOS technologies
Dunn, James S, Ahlgren, David C, Coolbaugh, Douglas D, Feilchenfeld, Natalie B
Published in IBM journal of research and development (01.03.2003)
Published in IBM journal of research and development (01.03.2003)
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Journal Article