Extreme reduction of on-resistance in vertical GaN p-n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method
Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Kitamoto, Akira, Imanishi, Masayuki, Yoshimura, Masashi, Asai, Naomi, Ohta, Hiroshi, Mishima, Tomoyoshi, Mori, Yusuke
Published in Applied physics express (01.07.2020)
Published in Applied physics express (01.07.2020)
Get full text
Journal Article
Effect of additional N2O gas on the suppression of polycrystal formation and high-rate GaN crystal growth by OVPE method
Shimizu, Ayumu, Kitamoto, Akira, Kamiyama, Masahiro, Tsuno, Shintaro, Ishibashi, Keiju, Usami, Shigeyoshi, Imanishi, Masayuki, Maruyama, Mihoko, Yoshimura, Masashi, Sumi, Tomoaki, Takino, Junichi, Okayama, Yoshio, Hata, Masahiko, Isemura, Masashi, Mori, Yusuke
Published in Journal of crystal growth (01.03.2022)
Published in Journal of crystal growth (01.03.2022)
Get full text
Journal Article
Development of a 2-inch GaN wafer by using the oxide vapor phase epitaxy method
Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Nobuoka, Masaki, Kitamoto, Akira, Imanishi, Msayuki, Yoshimura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
Get full text
Journal Article
Floral design GaN crystals: low-resistive and low-dislocation-density growth by oxide vapor phase epitaxy
Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Kitamoto, Akira, Usami, Shigeyoshi, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.09.2021)
Published in Japanese Journal of Applied Physics (01.09.2021)
Get full text
Journal Article
Influence of oxygen-related defects on the electronic structure of GaN
Ohata, Satoshi, Kawamura, Takahiro, Akiyama, Toru, Usami, Shigeyoshi, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke, Sumi, Tomoaki, Takino, Junichi
Published in Japanese Journal of Applied Physics (01.06.2022)
Published in Japanese Journal of Applied Physics (01.06.2022)
Get full text
Journal Article
Effect of methane additive on GaN growth using the OVPE method
Kitamoto, Akira, Takino, Junichi, Sumi, Tomoaki, Kamiyama, Masahiro, Tsuno, Shintaro, Ishibashi, Keiju, Gunji, Yoshikazu, Imanishi, Masayuki, Okayama, Yoshio, Nobuoka, Masaki, Isemura, Masashi, Yoshimura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
Get full text
Journal Article
Origin of Black Color in Heavily Doped n‐Type GaN Crystal
Sumi, Tomoaki, Takino, Junichi, Okayama, Yoshio, Usami, Shigeyoshi, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke
Published in physica status solidi (b) (16.03.2024)
Published in physica status solidi (b) (16.03.2024)
Get full text
Journal Article