Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process
Moon Sig Joo, Byung Jin Cho, Chia Ching Yeo, Siu Hung Chan, D., Sung Jin Whoang, Mathew, S., Kanta Bera, L., Balasubramanian, N., Dim-Lee Kwong
Published in IEEE transactions on electron devices (01.10.2003)
Published in IEEE transactions on electron devices (01.10.2003)
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Journal Article
Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory
Sung, Min-Gyu, Kim, Sook Joo, Joo, Moon Sig, Roh, Jae Sung, Ryu, Cheolhwi, Hong, Seunghun, Kim, Heonho, Kim, Yong Soo
Published in Solid-state electronics (01.09.2011)
Published in Solid-state electronics (01.09.2011)
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Journal Article
Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory Device
JONG KYUNG PARK, PARK, Youngmin, LEE, Seok-Hee, SUNG KYU IIM, JAE SUB OH, MOON SIG JOO, HONG, Kwon, BYUNG JIN CHO
Published in IEEE transactions on electron devices (01.10.2011)
Published in IEEE transactions on electron devices (01.10.2011)
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Journal Article
Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO2 Resistive Material Depending on the Thickness of Ti
Kim, Sook Joo, Sung, Min Gyu, Joo, Moon Sig, Kim, Wan Gee, Kim, Ja Yong, Yoo, Jong Hee, Kim, Jung Nam, Gyun, Byun Ggu, Byun, Jun Young, Roh, Jae Sung, Park, Sung Ki, Kim, Yong Soo
Published in Jpn J Appl Phys (01.04.2011)
Published in Jpn J Appl Phys (01.04.2011)
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Journal Article
Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3 Blocking Layer in Flash Memory Device
Park, Jong Kyung, Park, Youngmin, Lee, Seok-Hee, Lim, Sung Kyu, Oh, Jae Sub, Joo, Moon Sig, Hong, Kwon, Cho, Byung Jin
Published in Jpn J Appl Phys (01.04.2011)
Published in Jpn J Appl Phys (01.04.2011)
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Journal Article
Cubic-Structured HfLaO for the Blocking Layer of a Charge-Trap Type Flash Memory Device
Park, Jong Kyung, Park, Youngmin, Song, Myeong Ho, Lim, Sung Kyu, Oh, Jae Sub, Joo, Moon Sig, Hong, Kwon, Cho, Byung Jin
Published in Applied physics express (01.09.2010)
Published in Applied physics express (01.09.2010)
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Journal Article
Thermally Stable NiSi Gate Electrode with TiN Barrier Metal for High-Density NAND Flash Memory Devices
Whang, Sung-Jin, Joo, Moon-Sig, Seo, Bo-Min, Chang, Kyoung-Eun, Kim, Won-Kyu, Jung, Tae-Woo, Kim, Gyu-Hyun, Lim, Jung-Yeon, Kim, Ka-Young, Hong, Kwon, Park, Sung-Ki
Published in Japanese Journal of Applied Physics (01.04.2010)
Published in Japanese Journal of Applied Physics (01.04.2010)
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Journal Article
Modeling and Characterization of Program / Erasure Speed and Retention of TiN-gate MANOS (Si-Oxide-SiNx-Al2O3-Metal Gate) Cells for NAND Flash Memory
Eun-Seok Choi, Hyun-Seung Yoo, Kyoung-Hwan Park, Se-Jun Kim, Jung-Ryul Ahn, Myung-Shik Lee, Young-Ok Hong, Suk-Goo Kim, Jae-Chul Om, Moon-Sig Joo, Seung-Ho Pyi, Seaung-Suk Lee, Seok-Kiu Lee, Gi-Hyun Bae
Published in 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop (01.08.2007)
Published in 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop (01.08.2007)
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Conference Proceeding
Effects of Ge content on the oxidation behavior of Poly-Si1 -xGex layers for gate electrode application
AHN, Tae-Hang, YEO, In-Seok, KIM, Tae-Kyun, JOO, Moon-Sig, KIM, Hyeon-Soo, KIM, Joong-Jung, JOUNG, Joong-Ho, JIN WON PARK
Published in Journal of the Electrochemical Society (01.02.2001)
Published in Journal of the Electrochemical Society (01.02.2001)
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Journal Article
Mechanism of Date Retention Improvement by High Temperature Annealing of Al 2 O 3 Blocking Layer in Flash Memory Device
Park, Jong Kyung, Park, Youngmin, Lee, Seok-Hee, Lim, Sung Kyu, Oh, Jae Sub, Joo, Moon Sig, Hong, Kwon, Cho, Byung Jin
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Mechanism of Date Retention Improvement by High Temperature Annealing of Al 2 O 3 Blocking Layer in Flash Memory Device
Park, Jong Kyung, Park, Youngmin, Lee, Seok-Hee, Lim, Sung Kyu, Oh, Jae Sub, Joo, Moon Sig, Hong, Kwon, Cho, Byung Jin
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO 2 Resistive Material Depending on the Thickness of Ti
Kim, Sook Joo, Sung, Min Gyu, Joo, Moon Sig, Kim, Wan Gee, Kim, Ja Yong, Yoo, Jong Hee, Kim, Jung Nam, Gyun, Byun Ggu, Byun, Jun Young, Roh, Jae Sung, Park, Sung Ki, Kim, Yong Soo
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO 2 Resistive Material Depending on the Thickness of Ti
Kim, Sook Joo, Sung, Min Gyu, Joo, Moon Sig, Kim, Wan Gee, Kim, Ja Yong, Yoo, Jong Hee, Kim, Jung Nam, Gyun, Byun Ggu, Byun, Jun Young, Roh, Jae Sung, Park, Sung Ki, Kim, Yong Soo
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article