Effects of interstitial oxygen defects at HfOxNy/Si interface on electrical characteristics of MOS devices
CHENG, Chin-Lung, LU, Chun-Yuan, CHANG-LIAO, Kuei-Shu, HUANG, Ching-Hung, WANG, Sheng-Hung, WANG, Tien-Ko
Published in IEEE transactions on electron devices (2006)
Published in IEEE transactions on electron devices (2006)
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An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality HfxGeyO Interfacial Layer
Fu, Chung-Hao, Chang-Liao, Kuei-Shu, Liu, Li-Jung, Li, Chen-Chien, Chen, Ting-Ching, Cheng, Jen-Wei, Lu, Chun-Chang
Published in IEEE transactions on electron devices (01.08.2014)
Published in IEEE transactions on electron devices (01.08.2014)
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High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET
Yao, Yi-Ju, Yang, Ching-Ru, Tseng, Ting-Yu, Chang, Heng-Jia, Lin, Tsai-Jung, Luo, Guang-Li, Hou, Fu-Ju, Wu, Yung-Chun, Chang-Liao, Kuei-Shu
Published in Nanomaterials (Basel, Switzerland) (08.04.2023)
Published in Nanomaterials (Basel, Switzerland) (08.04.2023)
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Detection of Stress-Induced Interface Trap Generation on High- k Gated nMOSFETs in Real Time by Stress-and-Sense Charge Pumping Technique
Lu, Chun-Chang, Chang-Liao, Kuei-Shu, Tsai, Fu-Huan, Li, Chen-Chien, Wang, Tien-Ko
Published in IEEE transactions on electron devices (01.05.2015)
Published in IEEE transactions on electron devices (01.05.2015)
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Fe-Vacancy-Ordered Fe4Se5: The Insulating Parent Phase of FeSe Superconductor
Yeh, Keng-Yu, Chen, Yan-Ruei, Lo, Tung-Sheng, Wu, Phillip M., Wang, Ming-Jye, Chang-Liao, Kuei-Shu, Wu, Maw-Kuen
Published in Frontiers in physics (13.11.2020)
Published in Frontiers in physics (13.11.2020)
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Reliability and Thermal Stability of Clustered Vertical Furnace-Grown SiO2 With HfxTayN Metal Gate for Advanced MOS Device Application
Kuei-Shu Chang-Liao, Kuei-Shu Chang-Liao, Chin-Lung Cheng, Chin-Lung Cheng, Chun-Yuan Lu, Chun-Yuan Lu, Bhabani Shankar Sahu, Bhabani Shankar Sahu, Tzu-Chen Wang, Tzu-Chen Wang, Tien-Ko Wang, Tien-Ko Wang, Shang-Feng Huang, Shang-Feng Huang, Wen-Fa Tsai, Wen-Fa Tsai, Chi-Fong Ai, Chi-Fong Ai
Published in IEEE transactions on electron devices (01.02.2007)
Published in IEEE transactions on electron devices (01.02.2007)
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Photothermal Responsivity of van der Waals Material-Based Nanomechanical Resonators
Aguila, Myrron Albert Callera, Esmenda, Joshoua Condicion, Wang, Jyh-Yang, Chen, Yen-Chun, Lee, Teik-Hui, Yang, Chi-Yuan, Lin, Kung-Hsuan, Chang-Liao, Kuei-Shu, Kafanov, Sergey, Pashkin, Yuri A, Chen, Chii-Dong
Published in Nanomaterials (Basel, Switzerland) (04.08.2022)
Published in Nanomaterials (Basel, Switzerland) (04.08.2022)
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Journal Article
Profiling of Channel-Hot-Carrier Stress-Induced Trap Distributions Along Channel and Gate Dielectric in High- k Gated MOSFETs by a Modified Charge Pumping Technique
Lu, Chun-Chang, Chang-Liao, Kuei-Shu, Tsao, Che-Hao, Wang, Tien-Ko, Ko, Hsueh-Chao, Hsu, Yao-Tung
Published in IEEE transactions on electron devices (01.04.2014)
Published in IEEE transactions on electron devices (01.04.2014)
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Enhanced zirconia oxide dielectric quality of germanium p-channel metal oxide semiconductor field effect transistor by in-situ low temperature treatment in atomic layer deposition process
Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Li, Ji-Syuan, Yi, Shih-Han
Published in Thin solid films (01.05.2020)
Published in Thin solid films (01.05.2020)
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Effects of pre- and post-microwave annealing treatments on pGe MOS device
Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Liu, Chia-Chien, Chien, Yu-Hsuan, Lee, Yao-Jen
Published in Surface & coatings technology (15.10.2021)
Published in Surface & coatings technology (15.10.2021)
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Journal Article
Electrical Degradation and Recovery of Low-Temperature Polycrystalline Silicon Thin-Film Transistors in Polycrystalline Silicon Plasma Process
CHANG, Jiun-Jye, CHANG-LIAO, Kuei-Shu, WANG, Tien-Ko, WU, Yung-Chun, LIN, Kao-Chao, CHEN, Chia-Yu, CHEN, Yu-Mou, TSENG, Jen-Pei, HUNG, Min-Feng
Published in IEEE transactions on electron devices (01.08.2011)
Published in IEEE transactions on electron devices (01.08.2011)
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Journal Article
Oxygen diffusion barrier on interfacial layer formed with remote NH3 plasma treatment
Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Yeh, Hsin-I, Chu, Fu-Yang, Yang, Kai-Chun, Wu, Po-Chun, Hsieh, E-Ray
Published in Surface & coatings technology (15.10.2021)
Published in Surface & coatings technology (15.10.2021)
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Journal Article
Low EOT and oxide traps for p-substrate Ge MOS device with hafnium nitride interfacial layer
Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Hsu, Wen-Yen, Yi, Shih-Han, Lee, Yao-Jen
Published in Vacuum (01.09.2020)
Published in Vacuum (01.09.2020)
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Electrical and Reliability Characteristics of FinFETs With High-k Gate Stack and Plasma Treatments
Li, Yan-Lin, Chang-Liao, Kuei-Shu, Li, Chen-Chien, Huang, Chin-Hsiu, Tsai, Shang-Fu, Li, Cheng-Yuan, Hong, Zi-Qin, Fang, Hsin-Kai
Published in IEEE transactions on electron devices (01.01.2021)
Published in IEEE transactions on electron devices (01.01.2021)
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