Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111)
Auzelle, T, Oliva, M, John, P, Ramsteiner, M, Trampert, A, Geelhaar, L, Brandt, O
Published in Nanotechnology (10.09.2023)
Published in Nanotechnology (10.09.2023)
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Journal Article
Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence
Fernández-Garrido, S, Kaganer, V M, Hauswald, C, Jenichen, B, Ramsteiner, M, Consonni, V, Geelhaar, L, Brandt, O
Published in Nanotechnology (14.11.2014)
Published in Nanotechnology (14.11.2014)
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Journal Article
A route for the top-down fabrication of ordered ultrathin GaN nanowires
Oliva, M, Kaganer, V, Pudelski, M, Meister, S, Tahraoui, A, Geelhaar, L, Brandt, O, Auzelle, T
Published in Nanotechnology (14.05.2023)
Published in Nanotechnology (14.05.2023)
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Journal Article
Macro- and micro-strain in GaN nanowires on Si(111)
Jenichen, B, Brandt, O, Pfüller, C, Dogan, P, Knelangen, M, Trampert, A
Published in Nanotechnology (22.07.2011)
Published in Nanotechnology (22.07.2011)
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Journal Article
Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils
Calabrese, G, Pettersen, S V, Pfüller, C, Ramsteiner, M, Grepstad, J K, Brandt, O, Geelhaar, L, Fernández-Garrido, S
Published in Nanotechnology (20.10.2017)
Published in Nanotechnology (20.10.2017)
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Journal Article
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
John, P, Gómez Ruiz, M, van Deurzen, L, Lähnemann, J, Trampert, A, Geelhaar, L, Brandt, O, Auzelle, T
Published in Nanotechnology (12.11.2023)
Published in Nanotechnology (12.11.2023)
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Journal Article
Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy
Ruiz, M Gómez, Castro, A, Herranz, J, da Silva, A, John, P, Trampert, A, Brandt, O, Geelhaar, L, Lähnemann, J
Published in Nanotechnology (24.06.2024)
Published in Nanotechnology (24.06.2024)
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Journal Article
Acceleration in thinning rate on western Svalbard glaciers
Kohler, J., James, T. D., Murray, T., Nuth, C., Brandt, O., Barrand, N. E., Aas, H. F., Luckman, A.
Published in Geophysical research letters (01.09.2007)
Published in Geophysical research letters (01.09.2007)
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Journal Article
Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film
Wölz, M, Hauswald, C, Flissikowski, T, Gotschke, T, Fernández-Garrido, S, Brandt, O, Grahn, H. T, Geelhaar, L, Riechert, H
Published in Nano letters (10.06.2015)
Published in Nano letters (10.06.2015)
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Journal Article
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Waltereit, P, Brandt, O, Trampert, A, Grahn, H. T, Menniger, J, Ramsteiner, M, Reiche, M, Ploog, K. H
Published in Nature (London) (24.08.2000)
Published in Nature (London) (24.08.2000)
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Journal Article
Optical properties of GaN nanowires grown on chemical vapor deposited-graphene
Mancini, L, Morassi, M, Sinito, C, Brandt, O, Geelhaar, L, Song, Hyun-Gyu, Cho, Yong-Hoon, Guan, N, Cavanna, A, Njeim, J, Madouri, A, Barbier, C, Largeau, L, Babichev, A, Julien, F H, Travers, L, Oehler, F, Gogneau, N, Harmand, J-C, Tchernycheva, M
Published in Nanotechnology (24.05.2019)
Published in Nanotechnology (24.05.2019)
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Journal Article
Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3
Calabrese, G, Gao, G, van Treeck, D, Corfdir, P, Sinito, C, Auzelle, T, Trampert, A, Geelhaar, L, Brandt, O, Fernández-Garrido, S
Published in Nanotechnology (15.03.2019)
Published in Nanotechnology (15.03.2019)
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Journal Article
Self-assembled growth of GaN nanowires on amorphous AlxOy: from nucleation to the formation of dense nanowire ensembles
Sobanska, M, Fernández-Garrido, S, Zytkiewicz, Z R, Tchutchulashvili, G, Gieraltowska, S, Brandt, O, Geelhaar, L
Published in Nanotechnology (29.06.2016)
Published in Nanotechnology (29.06.2016)
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Journal Article
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes
Musolino, M, Tahraoui, A, Fernández-Garrido, S, Brandt, O, Trampert, A, Geelhaar, L, Riechert, H
Published in Nanotechnology (27.02.2015)
Published in Nanotechnology (27.02.2015)
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Journal Article
Acoustically Driven Photon Antibunching in Nanowires
Hernández-Mínguez, A, Möller, M, Breuer, S, Pfüller, C, Somaschini, C, Lazić, S, Brandt, O, García-Cristóbal, A, de Lima, M. M, Cantarero, A, Geelhaar, L, Riechert, H, Santos, P. V
Published in Nano letters (11.01.2012)
Published in Nano letters (11.01.2012)
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Journal Article
Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process
Zettler, J K, Corfdir, P, Geelhaar, L, Riechert, H, Brandt, O, Fernández-Garrido, S
Published in Nanotechnology (06.11.2015)
Published in Nanotechnology (06.11.2015)
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Journal Article
Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
van Deurzen, L., Singhal, J., Encomendero, J., Pieczulewski, N., Chang, C. S., Cho, Y., Muller, D. A., Xing, H. G., Jena, D., Brandt, O., Lähnemann, J.
Published in APL materials (01.08.2023)
Published in APL materials (01.08.2023)
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Journal Article
Current path in light emitting diodes based on nanowire ensembles
Limbach, F, Hauswald, C, Lähnemann, J, Wölz, M, Brandt, O, Trampert, A, Hanke, M, Jahn, U, Calarco, R, Geelhaar, L, Riechert, H
Published in Nanotechnology (23.11.2012)
Published in Nanotechnology (23.11.2012)
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Journal Article