Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors
Li, GongTan, Yang, Bo-Ru, Liu, Chuan, Lee, Chia-Yu, Tseng, Chih-Yuan, Lo, Chang-Cheng, Lien, Alan, Deng, ShaoZhi, Shieh, Han-Ping D, Xu, NingSheng
Published in Journal of physics. D, Applied physics (02.12.2015)
Published in Journal of physics. D, Applied physics (02.12.2015)
Get full text
Journal Article