A novel dual-channel 3D NAND flash featuring both N-channel and P-channel NAND characteristics for bit-alterable Flash memory and a new opportunity in sensing the stored charge in the WL space
Lue, Hang-Ting, Du, Pei-Ying, Chen, Wei-Chen, Yeh, Ten-Hao, Chang, Kuo-Ping, Hsiao, Yi-Hsuan, Shih, Yen-Hao, Hung, Chun-Hsiung, Lu, Chih-Yuan
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
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Conference Proceeding
Journal Article
A novel capacitive-coupled floating gate antenna protection design and its application to prevent in-process charging effects for 3D NAND flash memory
Hang-Ting Lue, Ten-Hao Yeh, Kuo-Ping Chang, Tzu-Hsuan Hsu, Yen-Hao Shih, Chih-Yuan Lu
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
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Conference Proceeding
Study of the interference and disturb mechanisms of split-page 3D vertical gate (VG) NAND flash and optimized programming algorithms for multi-level cell (MLC) storage
Chih-Chang Hsieh, Hang-Ting Lue, Yung Chun Li, Kuo-Ping Chang, Hsing Chen Lu, Hsiang-Pang Li, Wei-Chen Chen, Yi-Hsuan Hsiao, Shuo-Nan Hung, Ti-Wen Chen, Yen-Hao Shih, Chih-Yuan Lu
Published in 2013 Symposium on VLSI Technology (01.06.2013)
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Published in 2013 Symposium on VLSI Technology (01.06.2013)
Conference Proceeding
Modeling the variability caused by random grain boundary and trap-location induced asymmetrical read behavior for a tight-pitch vertical gate 3D NAND Flash memory using double-gate thin-film transistor (TFT) device
Yi-Hsuan Hsiao, Hang-Ting Lue, Wei-Chen Chen, Chih-Ping Chen, Kuo-Ping Chang, Yen-Hao Shih, Bing-Yue Tsui, Chih-Yuan Lu
Published in 2012 International Electron Devices Meeting (01.12.2012)
Published in 2012 International Electron Devices Meeting (01.12.2012)
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Conference Proceeding
A novel bit alterable 3D NAND flash using junction-free p-channel device with band-to-band tunneling induced hot-electron programming
Hang-Ting Lue, Kuo-Ping Chang, Chih-Ping Chen, Ten-Hao Yeh, Tzu-Hsuan Hsu, Pei-Ying Du, Yen-Hao Shih, Chih-Yuan Lu
Published in 2013 Symposium on VLSI Technology (01.06.2013)
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Published in 2013 Symposium on VLSI Technology (01.06.2013)
Conference Proceeding
Read Disturb Evaluations of 3D NAND Flash for Highly Read-Intensive Edge-Computing Inference Device for Artificial Intelligence Applications
Du, Pei-Ying, Lue, Hang-Ting, Hsu, Tzu-Hsuan, Hsieh, Chih-Chang, Chen, Wei-Chen, Chang, Kuo-Ping, Wang, Keh-Chung, Lu, Chih-Yuan
Published in 2019 IEEE 11th International Memory Workshop (IMW) (01.05.2019)
Published in 2019 IEEE 11th International Memory Workshop (IMW) (01.05.2019)
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Conference Proceeding
A novel double-trapping BE-SONOS charge-trapping NAND flash device to overcome the erase saturation without using curvature-induced field enhancement effect or high-K (HK)/metal gate (MG) materials
Hang-Ting Lue, Lo, Roger, Chih-Chang Hsieh, Pei-Ying Du, Chih-Ping Chen, Tzu-Hsuan Hsu, Kuo-Ping Chang, Yen-Hao Shih, Chih-Yuan Lu
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
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Conference Proceeding