AlGaN/GaN FinFET With Extremely Broad Transconductance by Side-Wall Wet Etch
Jo, Young-Woo, Son, Dong-Hyeok, Won, Chul-Ho, Im, Ki-Sik, Seo, Jae Hwa, Kang, In Man, Lee, Jung-Hee
Published in IEEE electron device letters (01.10.2015)
Published in IEEE electron device letters (01.10.2015)
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Journal Article
Mimicking Bone Extracellular Matrix: From BMP‐2‐Derived Sequences to Osteogenic‐Multifunctional Coatings
Oliver‐Cervelló, Lluís, Martin‐Gómez, Helena, Mandakhbayar, Nandin, Jo, Young‐Woo, Cavalcanti‐Adam, Elisabetta Ada, Kim, Hae‐Won, Ginebra, Maria‐Pau, Lee, Jung‐Hwan, Mas‐Moruno, Carlos
Published in Advanced healthcare materials (01.10.2022)
Published in Advanced healthcare materials (01.10.2022)
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Journal Article
Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced I - V Characteristic for Switching Applications
Seo, Jae Hwa, Jo, Young-Woo, Yoon, Young Jun, Son, Dong-Hyeok, Won, Chul-Ho, Jang, Hwan Soo, Kang, In Man, Lee, Jung-Hee
Published in IEEE electron device letters (01.07.2016)
Published in IEEE electron device letters (01.07.2016)
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Journal Article
Heterojunction-Free GaN Nanochannel FinFETs With High Performance
Ki-Sik Im, Young-Woo Jo, Jae-Hoon Lee, Cristoloveanu, S., Jung-Hee Lee
Published in IEEE electron device letters (01.03.2013)
Published in IEEE electron device letters (01.03.2013)
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Journal Article
1/ f Noise Characteristics of Surface-Treated Normally-Off Al2O3/GaN MOSFETs
Sakong, SungHwan, Lee, Sang-Hyun, Rim, Taiuk, Jo, Young-Woo, Lee, Jung-Hee, Jeong, Yoon-Ha
Published in IEEE electron device letters (01.03.2015)
Published in IEEE electron device letters (01.03.2015)
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Journal Article
Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET
Son, Dong-Hyeok, Jo, Young-Woo, Sindhuri, V., Im, Ki-Sik, Seo, Jae Hwa, Kim, Yong Tae, Kang, In Man, Cristoloveanu, Sorin, Bawedin, Maryline, Lee, Jung-Hee
Published in Microelectronic engineering (01.11.2015)
Published in Microelectronic engineering (01.11.2015)
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Journal Article
Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors
Chang, Sung-Jae, Kang, Hee-Sung, Lee, Jae-Hoon, Yang, Jie, Bhuiyan, Maruf, Jo, Young-Woo, Cui, Sharon, Lee, Jung-Hee, Ma, Tso-Ping
Published in Japanese Journal of Applied Physics (01.04.2016)
Published in Japanese Journal of Applied Physics (01.04.2016)
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Journal Article
Normally‐off vertical‐type mesa‐gate GaN MOSFET
Won, Chul‐Ho, Kim, Ki‐Won, Kim, Dong‐Seok, Kang, Hee‐Sung, Im, Ki‐Sik, Jo, Young‐Woo, Kim, Do‐Kywn, Kim, Ryun‐Hwi, Lee, Jung‐Hee
Published in Electronics letters (06.11.2014)
Published in Electronics letters (06.11.2014)
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Journal Article
Heat Dissipation of Transparent Graphene Defoggers
Bae, Jung Jun, Lim, Seong Chu, Han, Gang Hee, Jo, Young Woo, Doung, Dinh Loc, Kim, Eun Sung, Chae, Seung Jin, Huy, Ta Quang, Van Luan, Nguyen, Lee, Young Hee
Published in Advanced functional materials (21.11.2012)
Published in Advanced functional materials (21.11.2012)
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Journal Article
First demonstration of GaN-based vertical nanowire FET with top-down approach
Young-Woo Jo, Dong-Hyeok Son, Dong-Gi Lee, Chul-Ho Won, Jae Hwa Seo, In Man Kang, Jung-Hee Lee
Published in 2015 73rd Annual Device Research Conference (DRC) (01.06.2015)
Published in 2015 73rd Annual Device Research Conference (DRC) (01.06.2015)
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Conference Proceeding
Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution
Dong-Hyeok Son, Young-woo Jo, Ryun-Hwi Kim, Chan Heo, Jae Hwa Seo, Jin Su Kim, In Man Kang, Cristoloveanu, Sorin, Jung-Hee Lee
Published in 2015 45th European Solid State Device Research Conference (ESSDERC) (01.09.2015)
Published in 2015 45th European Solid State Device Research Conference (ESSDERC) (01.09.2015)
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Conference Proceeding
Role of Anions in the AuCl3-Doping of Carbon Nanotubes
Kim, Soo Min, Kim, Ki Kang, Jo, Young Woo, Park, Min Ho, Chae, Seung Jin, Duong, Dinh Loc, Yang, Cheol Woong, Kong, Jing, Lee, Young Hee
Published in ACS nano (22.02.2011)
Published in ACS nano (22.02.2011)
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Journal Article
Growth of AlN/GaN HEMT structure Using Indium-surfactant
Kim, Jeong-Gil, Won, Chul-Ho, Kim, Do-Kywn, Jo, Young-Woo, Lee, Jun-Hyeok, Kim, Yong-Tae, Cristoloveanu, Sorin, Lee, Jung-Hee
Published in Journal of semiconductor technology and science (01.10.2015)
Published in Journal of semiconductor technology and science (01.10.2015)
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Journal Article
Device Performances Related to Gate Leakage Current in Al₂O₃/AlGaN/GaN MISHFETs
Do-Kywn Kim, V.Sindhuri, Dong-Seok Kim, Young-Woo Jo, Hee-Sung Kang, Young-In Jang, In Man Kang, Youngho Bae, Sung-Ho Hahm, Jung-Hee Lee
Published in Journal of semiconductor technology and science (01.10.2014)
Published in Journal of semiconductor technology and science (01.10.2014)
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Journal Article
Facile Physical Route to Highly Crystalline Graphene
Jin, Meihua, Kim, Tae Hyung, Lim, Seong Chu, Duong, Dinh Loc, Shin, Hyeon Jin, Jo, Young Woo, Jeong, Hae Kyung, Chang, Jian, Xie, Sishen, Lee, Young Hee
Published in Advanced functional materials (23.09.2011)
Published in Advanced functional materials (23.09.2011)
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Journal Article
Low voltage operation of GaN vertical nanowire MOSFET
Son, Dong-Hyeok, Jo, Young-Woo, Seo, Jae Hwa, Won, Chul-Ho, Im, Ki-Sik, Lee, Yong Soo, Jang, Hwan Soo, Kim, Dae-Hyun, Kang, In Man, Lee, Jung-Hee
Published in Solid-state electronics (01.07.2018)
Published in Solid-state electronics (01.07.2018)
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Journal Article
Lateral GaN nanowire prepared by using two-step TMAH wet etching and HfO2 sidewall spacer
Im, Ki-Sik, Won, Chul-Ho, Vodapally, Sindhuri, Son, Dong-Hyeok, Jo, Young-Woo, Park, YoHan, Lee, Jae-Hoon, Lee, Jung-Hee
Published in Journal of crystal growth (01.05.2016)
Published in Journal of crystal growth (01.05.2016)
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Journal Article
Transparent Organic P-Dopant in Carbon Nanotubes: Bis(trifluoromethanesulfonyl)imide
Kim, Soo Min, Jo, Young Woo, Kim, Ki Kang, Duong, Dinh Loc, Shin, Hyeon-Jin, Han, Jong Hun, Choi, Jae-Young, Kong, Jing, Lee, Young Hee
Published in ACS nano (23.11.2010)
Published in ACS nano (23.11.2010)
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Journal Article
Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching
Son, Dong-Hyeok, Jo, Young-Woo, Won, Chul-Ho, Lee, Jun-Hyeok, Seo, Jae Hwa, Lee, Sang-Heung, Lim, Jong-Won, Kim, Ji Heon, Kang, In Man, Cristoloveanu, Sorin, Lee, Jung-Hee
Published in Solid-state electronics (01.03.2018)
Published in Solid-state electronics (01.03.2018)
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Journal Article