Understanding Strain-Induced Drive-Current Enhancement in Strained-Silicon n-MOSFET and p-MOSFET
Flachowsky, Stefan, Wei, Andy, Illgen, Ralf, Herrmann, Tom, Höntschel, Jan, Horstmann, Manfred, Klix, Wilfried, Stenzel, Roland
Published in IEEE transactions on electron devices (01.06.2010)
Published in IEEE transactions on electron devices (01.06.2010)
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