Nucleation of 3C-SiC associated with threading edge dislocations during chemical vapor deposition
Abadier, M., Berechman, R.A., Neudeck, P.G., Trunek, A.J., Skowronski, M.
Published in Journal of crystal growth (15.05.2012)
Published in Journal of crystal growth (15.05.2012)
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Journal Article
Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps
Bassim, N.D., Twigg, M.E., Mastro, M.A., Eddy, C.R., Zega, T.J., Henry, R.L., Culbertson, J.C., Holm, R.T., Neudeck, P., Powell, J.A., Trunek, A.J.
Published in Journal of crystal growth (01.06.2007)
Published in Journal of crystal growth (01.06.2007)
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Journal Article
CVD Growth of 3C-SiC on 4H/6H Mesas
Neudeck, P. G., Trunek, A. J., Spry, D. J., Powell, J. A., Du, H., Skowronski, M., Huang, X. R., Dudley, M.
Published in Chemical vapor deposition (01.08.2006)
Published in Chemical vapor deposition (01.08.2006)
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Approaches to Reduced-Defect Active Regions for III-N Devices
Eddy, Charles R., Mastro, Michael, Bassim, Nabil, Twigg, Mark, Henry, Richard, Holm, Ronald, Culbertson, James, Glembocki, Orest, Caldwell, Joshua D., Neudeck, Phillip, Trunek, Andrew, Powell, J. Anthony, Peckerar, Martin, Ngu, Yves, Yan, Feng, Babu, Sachidananda
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
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