Search Results - "PARRIES; PAUL C" :: K.UTB vyhledávací portál

METHOD OF DEPOSITING CONDUCTORS IN HIGH ASPECT RATIO APERTURES USING A COLLIMATOR

by LEE, PEI -P, RYAN, JAMES G, MCDEVITT, THOMAS L, PENNINGTON, SCOTT L, STRIPPE, DAVID C, PARRIES, PAUL C, LICATA, THOMAS J
Year of Publication 04.09.1996

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Semiconductor structure having wide and narrow deep trenches with different materials

by PARRIES PAUL C, ZHANG YANLI
Year of Publication 18.02.2014

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Through-gate implant for body dopant

by PARRIES PAUL C, WANG GENG
Year of Publication 25.09.2012

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SEMICONDUCTOR STRUCTURE HAVING WIDE AND NARROW DEEP TRENCHES WITH DIFFERENT MATERIALS

by PARRIES PAUL C, ZHANG YANLI
Year of Publication 17.05.2012

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Through-Gate Implant for Body Dopant

by PARRIES PAUL C, WANG GENG
Year of Publication 23.09.2010

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Structure and method to control bottom corner threshold in an SOI device

by Ervin Joseph, Johnson Jeffrey B, Parries Paul C, McStay Kevin, Pei Chengwen, Zhang Yanli, Wang Geng
Year of Publication 01.11.2016

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Correcting for stress induced pattern shifts in semiconductor manufacturing

by CHIDAMBARRAO DURESETI, CULP JAMES A, STOBERT IAN P, PARRIES PAUL C
Year of Publication 12.04.2016

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CORRECTING FOR STRESS INDUCED PATTERN SHIFTS IN SEMICONDUCTOR MANUFACTURING

by CHIDAMBARRAO DURESETI, CULP JAMES A, STOBERT IAN P, PARRIES PAUL C
Year of Publication 17.12.2015

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LOW ENERGY ION IMPLANTATION OF A JUNCTION BUTTING REGION

by NARASIMHA SHREESH, PARRIES PAUL C, PEI CHENGWEN, ONISHI KATSUNORI, WANG GENG
Year of Publication 03.12.2015

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ASYMMETRIC STRESSOR DRAM

by NARASIMHA SHREESH, PARRIES PAUL C, PEI CHENGWEN, ONISHI KATSUNORI, WANG GENG
Year of Publication 03.12.2015

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Method to reduce threshold voltage variability with through gate well implant

by JOHNSON JEFFREY B, ERVIN JOSEPH, PARRIES PAUL C, WANG GENG
Year of Publication 17.09.2013

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Low energy ion implantation of a junction butting region

by NARASIMHA SHREESH, PARRIES PAUL C, PEI CHENGWEN, ONISHI KATSUNORI, WANG GENG
Year of Publication 15.09.2015

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METHOD TO REDUCE THRESHOLD VOLTAGE VARIABILITY WITH THROUGH GATE WELL IMPLANT

by JOHNSON JEFFREY B, ERVIN JOSEPH, PARRIES PAUL C, WANG GENG
Year of Publication 27.12.2012

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Method of fabricating isolated capacitors and structure thereof

by KWON OH-JUNG, PARRIES PAUL C, SCHEPIS DOMINIC J, LEE JUNEDONG
Year of Publication 24.02.2015

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FINFET CONTACTING A CONDUCTIVE STRAP STRUCTURE OF A DRAM

by KHAN BABAR A, PARRIES PAUL C, WANG XINHUI, CHANG JOSEPHINE B
Year of Publication 05.02.2015

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Method to reduce threshold voltage variability with through gate well implant

by JOHNSON JEFFREY B, ERVIN JOSEPH, PARRIES PAUL C, WANG GENG
Year of Publication 30.10.2012

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Method of fabricating isolated capacitors and structure thereof

by KWON OH-JUNG, PARRIES PAUL C, SCHEPIS DOMINIC J, LEE JUNEDONG
Year of Publication 27.01.2015

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Method of fabricating isolated capacitors and structure thereof

by KWON OH-JUNG, PARRIES PAUL C, SCHEPIS DOMINIC J, LEE JUNEDONG
Year of Publication 21.01.2015

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Verfahren zur Herstellung isolierter Kondensatoren und Struktur daraus

by Kwon, Oh-jung, Schepis, Dominic J, Lee, Junedong, Parries, Paul C
Year of Publication 27.02.2020

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Method of fabricating isolated capacitors and structure thereof

by OH-JUNG KWON, JUNEDONG LEE, PAUL PARRIES C, DOMINIC SCHEPIS J
Year of Publication 01.10.2014

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