Characteristics of GaN/Si(1 1 1) epitaxy grown using Al0.1Ga0.9N/AlN composite nucleation layers having different thicknesses of AlN
JANG, Seong-Hwan, LEE, Seung-Jae, SEO, In-Seok, AHN, Haeng-Keun, LEE, Oh-Yeon, LEEM, Jae-Young, LEE, Cheul-Ro
Published in Journal of crystal growth (01.06.2002)
Published in Journal of crystal growth (01.06.2002)
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Journal Article
The influence of AlxGa1-xN intermediate buffer layer on the characteristics of GaN/Si(1 1 1) epitaxy
JANG, Seong-Hwan, LEE, Seong-Suk, LEE, Oh-Yeon, LEE, Cheul-Ro
Published in Journal of crystal growth (01.08.2003)
Published in Journal of crystal growth (01.08.2003)
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Journal Article