Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2
Gee Kim, Wan, Gyu Sung, Min, Joo Kim, Sook, Hee Yoo, Jong, One Youn, Te, Won Oh, Jang, Nam Kim, Jung, Gu Gyun, Byung, Wan Kim, Taeh, Ho Kim, Chi, Young Byun, Jun, Kim, Won, Sig Joo, Moon, Sung Roh, Jae, Ki Park, Sung
Published in Journal of the Electrochemical Society (2011)
Published in Journal of the Electrochemical Society (2011)
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Journal Article
METHOD AND GATE RUCTURE FOR THRESHOLD VOLTAGE MODULATION IN TRANSISTORS
JANG, SE AUG, KIM, HYUNG CHUL, LEE, SEUNG MI, JI, YUN HYUCK, JOO, MOON SIG
Year of Publication 13.05.2015
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Year of Publication 13.05.2015
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Effects of Ge content on the oxidation behavior of Poly-Si1 -xGex layers for gate electrode application
AHN, Tae-Hang, YEO, In-Seok, KIM, Tae-Kyun, JOO, Moon-Sig, KIM, Hyeon-Soo, KIM, Joong-Jung, JOUNG, Joong-Ho, JIN WON PARK
Published in Journal of the Electrochemical Society (01.02.2001)
Published in Journal of the Electrochemical Society (01.02.2001)
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Journal Article
3D-NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
CHOI, WON JOON, WHANG, SUNG JIN, KIM, BEOM YONG, JOO, MOON SIG, CHANG, KYOUNG EUN
Year of Publication 21.12.2010
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Year of Publication 21.12.2010
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NON-VILATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
KIM, HEON DO, CHOI, WON JOON, PARK, JONG KYUNG, CHO, BYUNG JIN, HONG, KWON, JOO, MOON SIG
Year of Publication 18.08.2011
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Year of Publication 18.08.2011
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VERTICAL CHANNEL TYPE NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
CHOI, WON JOON, WHANG, SUNG JIN, KIM, YONG SOO, CHO, HEUNG JAE, JOO, MOON SIG
Year of Publication 15.03.2010
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Year of Publication 15.03.2010
Patent
3D-NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
LEE, KI HONG, CHOI, WON JOON, LEE, YOUNG WOOK, KIM, BEOM YONG, CHO, JUN YEOL, JOO, MOON SIG
Year of Publication 15.03.2011
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Year of Publication 15.03.2011
Patent