Resistive switching induced by electronic avalanche breakdown in GaTa$_4$Se$_{8-x}$Te$_x$ narrow gap Mott Insulators
Guiot, Vincent, Cario, Laurent, Janod, Etienne, Corraze, Benoît, Ta Phuoc, Vinh, Rozenberg, Marcelo, Stoliar, Pablo, Cren, Tristan, Roditchev, Dimitri
Published in Nature communications (16.04.2013)
Published in Nature communications (16.04.2013)
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