Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same
Chung, Yun-Mo, Lee, Ki-Yong, Jeong, Min-Jae, Seo, Jin-Wook, Hong, Jong-Won, Na, Heung-Yeol, Kang, Eu-Gene, Chang, Seok-Rak, Yang, Tae-Hoon, Ahn, Ji-Su, Kim, Young-Dae, Park, Byoung-Keon, Lee, Kil-Won, Lee, Dong-Hyun, Yoon, Sang-Yon, Park, Jong-Ryuk, Choi, Bo-Kyung, Lisachenko, Maxim
Year of Publication 01.11.2011
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Year of Publication 01.11.2011
Patent