Search Results - "HODGE, WADE J" :: K.UTB vyhledávací portál

Silicon germanium heterojunction bipolar transistor having interstitial trapping layer in base region

by Hodge, Wade J, Joseph, Alvin J, Krishnasamy, Rajendran, Liu, Qizhi, Orner, Bradley A
Year of Publication 30.10.2012

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Patent

by Dupuis, Mark D, Hodge, Wade J, Kelly, Daniel T, Wuthrich, Ryan W
Year of Publication 19.08.2008

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Patent

by Dupuis, Mark D, Hodge, Wade J, Kelly, Daniel T, Wuthrich, Ryan W
Year of Publication 10.10.2006

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Patent

by Buchanan, Douglas A, Gousev, Evgeni P, Heenan, Carol J, Hodge, Wade J, Shank, Steven M, Varekamp, Patrick R
Year of Publication 03.05.2005

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Patent

by Buchanan, Douglas A, Gousev, Evgeni P, Heenan, Carol J, Hodge, Wade J, Shank, Steven M, Varekamp, Patrick R
Year of Publication 20.08.2002

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Patent

by Buchanan, Douglas A, Gousev, Evgeni P, Heenan, Carol J, Hodge, Wade J, Shank, Steven M, Varekamp, Patrick R
Year of Publication 12.02.2002

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Patent