DMOS device having a trenched bus structure
Hsieh, Hsin-Huang, Chuang, Chiao-Shun, Chang, Chien-Ping, Tseng, Mao-Song
Year of Publication 04.09.2007
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Year of Publication 04.09.2007
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Termination structure of DMOS device
Chuang, Chiao-Shun, Chang, Chien-Ping, Tseng, Mao-Song, Hsieh, Hsing-Huang
Year of Publication 08.08.2006
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Year of Publication 08.08.2006
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DMOS device having a trenched bus structure
Hsieh, Hsin-Huang, Chuang, Chiao-Shun, Chang, Chien-Ping, Tseng, Mao-Song
Year of Publication 01.08.2006
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Year of Publication 01.08.2006
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Termination structure for trench DMOS device and method of making the same
Hsieh, Hsin-Huang, Chuang, Chiao-Shun, Chang, Su-Wen, Tseng, Mao-Song
Year of Publication 14.02.2006
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Year of Publication 14.02.2006
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Termination structure of DMOS device and method of forming the same
Chuang, Chiao-Shun, Hsieh, Hsin-Huang, Tseng, Mao-Song, Chang, Chien-Ping
Year of Publication 24.01.2006
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Year of Publication 24.01.2006
Patent
Termination structure for trench DMOS device and method of making the same
Hsieh, Hsin-Huang, Chuang, Chiao-Shun, Chang, Su-Wen, Tseng, Mao-Song
Year of Publication 15.02.2005
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Year of Publication 15.02.2005
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Method for forming dual oxide layers at bottom of trench
Chuang, Chiao-Shun, Chang, Chien-Ping, Tseng, Mao-Song, Ni, Cheng-Tsung
Year of Publication 23.11.2004
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Year of Publication 23.11.2004
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Transistor with highly uniform threshold voltage
Chuang, Chiao-Shun, Chang, Chien-Ping, Tseng, Mao-Song, Hsieh, Hsin-Huang
Year of Publication 13.01.2004
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Year of Publication 13.01.2004
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Fabricating a DMOS transistor
Chuang, Chiao-Shun, Chang, Chien-Ping, Tseng, Mao-Song, Ni, Cheng-Tsung
Year of Publication 09.12.2003
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Year of Publication 09.12.2003
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