Fabrication of a freestanding GaN layer by direct growth on a ZnO template using hydride vapor phase epitaxy
Kim, Si-Young, Lee, Hyun-Jae, Park, Seung-Hwan, Lee, Woong, Jung, Mi-Na, Fujii, Katsushi, Goto, Takenari, Sekiguchi, Takashi, Chang, Jiho, Kil, Gyungsuk, Yao, Takafumi
Published in Journal of crystal growth (01.07.2010)
Published in Journal of crystal growth (01.07.2010)
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