Estimation of Energy-Saving Potential Using Commercial SiC Power Converters
Spejo, Lucas Barroso, Thekemuriyil, Tanya, Minamisawa, Renato Amaral
Published in Energies (Basel) (01.09.2024)
Published in Energies (Basel) (01.09.2024)
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Journal Article
High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O Atmosphere
Schöner, Adolf, Knoll, Lars, Minamisawa, Renato A., Afanasyev, Alexey V., Alfieri, Giovanni, Mikhaylov, Aleksey I., Reshanov, Sergey A., Luchinin, Victor V., Bartolf, Holger
Published in Materials science forum (24.05.2016)
Published in Materials science forum (24.05.2016)
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Journal Article
Formation of Ohmic Contacts to n-Type 4H-SiC at Low Annealing Temperatures
Knoll, Lars, Sundaramoorthy, Vinoth, Kranz, Lukas, Minamisawa, Renato Amaral, Alfieri, Giovanni
Published in Materials science forum (05.06.2018)
Published in Materials science forum (05.06.2018)
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Journal Article
Ni-Al-Ti ohmic contacts on Al implanted 4H-SiC
Fedeli, P., Puzzanghera, M., Moscatelli, F., Minamisawa, R. A., Alfieri, G., Grossner, U., Nipoti, R.
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
On the influence of active area design on the performance of SiC JBS diodes
Mihaila, A., Minamisawa, R. A., Knoll, L., Sundaramoorthy, V. K., Bianda, E., Bartolf, H., Alfieri, G., Rahimo, M.
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO2 Interfaces
Knoll, Lars, Minamisawa, Renato Amaral, Bartolf, Holger, Mikhaylov, A.I., Schöner, Adolf, Alfieri, Giovanni, Luchinin, V.V., Reshanov, Sergey A., Afanasyev, Alexey V.
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
Passivation of 4H-SiC/SiO2 Interface Traps by Oxidation of a Thin Silicon Nitride Layer
Schöner, Adolf, Minamisawa, Renato Amaral, Bartolf, Holger, Alfieri, Giovanni, Afanasyev, Alexey V., Mikhaylov, A.I., Knoll, Lars, Reshanov, Sergey A., Luchinin, Victor V.
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
Performance Comparison of 6.5 kV SiC PiN Diode with 6.5 kV SiC JBS and Si Diodes
Minamisawa, Renato Amaral, Sundaramoorthy, Vinoth, Knoll, Lars, Mihaila, Andrei, Spejo, Lucas
Published in Materials science forum (31.05.2022)
Published in Materials science forum (31.05.2022)
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Journal Article
Investigation of Ti/Ni Bilayer Contacts to n-Type 4H-SiC
Song, Yu Lun, Sundaramoorthy, Vinoth Kumar, Minamisawa, Renato Amaral
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N sub(2) O Atmosphere
Mikhaylov, Aleksey I, Reshanov, S A, Schoner, Adolf, Afanasyev, Alexey V, Luchinin, Victor V, Knoll, Lars, Minamisawa, Renato A, Alfieri, Giovanni, Bartolf, Holger
Published in Materials Science Forum (01.05.2016)
Published in Materials Science Forum (01.05.2016)
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Journal Article
Passivation of 4H-SiC/SiO sub(2) Interface Traps by Oxidation of a Thin Silicon Nitride Layer
Mikhaylov, A I, Afanasyev, Alexey V, Luchinin, Victor V, Reshanov, S A, Schoner, Adolf, Knoll, Lars, Minamisawa, Renato Amaral, Alfieri, Giovanni, Bartolf, Holger
Published in Materials science forum (01.06.2015)
Published in Materials science forum (01.06.2015)
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Journal Article
Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO sub(2) Interfaces
Mikhaylov, A I, Afanasyev, Alexey V, Luchinin, V V, Reshanov, S A, Schoner, Adolf, Knoll, Lars, Minamisawa, Renato Amaral, Alfieri, Giovanni, Bartolf, Holger
Published in Materials science forum (01.06.2015)
Published in Materials science forum (01.06.2015)
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Journal Article