Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities
Lau, Wai Shing, Chor, Eng Fong, Chee Seng Foo, Chee Seng Foo, Wai Chee Khoong, Wai Chee Khoong
Published in Japanese Journal of Applied Physics (1992)
Published in Japanese Journal of Applied Physics (1992)
Get full text
Journal Article
Influence of PECVD deposited SiNx passivation layer thickness on In0.18Al0.82N/GaN/Si HEMT
Singh, Sarab Preet, Liu, Yi, Ngoo, Yi Jie, Kyaw, Lwin Min, Bera, Milan Kumar, Dolmanan, S B, Tripathy, Sudhiranjan, Chor, Eng Fong
Published in Journal of physics. D, Applied physics (16.09.2015)
Published in Journal of physics. D, Applied physics (16.09.2015)
Get full text
Journal Article
Influence of PECVD deposited SiN sub(x) passivation layer thickness on In sub(0.18)Al sub(0.82)N/GaN/Si HEMT
Singh, Sarab Preet, Liu, Yi, Ngoo, Yi Jie, Kyaw, Lwin Min, Bera, Milan Kumar, Dolmanan, S B, Tripathy, Sudhiranjan, Chor, Eng Fong
Published in Journal of physics. D, Applied physics (16.09.2015)
Published in Journal of physics. D, Applied physics (16.09.2015)
Get full text
Journal Article
Influence of PECVD deposited SiN x passivation layer thickness on In 0.18 Al 0.82 N/GaN/Si HEMT
Singh, Sarab Preet, Liu, Yi, Ngoo, Yi Jie, Kyaw, Lwin Min, Bera, Milan Kumar, Dolmanan, S B, Tripathy, Sudhiranjan, Chor, Eng Fong
Published in Journal of physics. D, Applied physics (16.09.2015)
Published in Journal of physics. D, Applied physics (16.09.2015)
Get full text
Journal Article
Effects of Annealing Pressure and Ambient on Thermally Robust RuO x Schottky Contacts on InAlN/AlN/GaN-on-Si(111) Heterostructure
Kyaw, Lwin Min, Liu, Yi, Lai, Mei Ying, Bhat, Thirumaleshwara N., Tan, Hui Ru, Lim, Poh Chong, Tripathy, Sudhiranjan, Chor, Eng Fong
Published in ECS transactions (13.04.2015)
Published in ECS transactions (13.04.2015)
Get full text
Journal Article
Annealing Pressure and Ambient Dependent RuO x Schottky Contacts on InAlN/AlN/GaN-on-Si(111) Heterostructure
Kyaw, Lwin Min, Liu, Yi, Lai, Mei Ying, Bhat, Thirumaleshwara N., Tan, Hui Ru, Lim, Poh Chong, Tripathy, Sudhiranjan, Chor, Eng Fong
Published in ECS journal of solid state science and technology (2016)
Published in ECS journal of solid state science and technology (2016)
Get full text
Journal Article
Annealing Pressure and Ambient Dependent RuOx Schottky Contacts on InAlN/AlN/GaN-on-Si(111) Heterostructure
Kyaw, Lwin Min, Liu, Yi, Lai, Mei Ying, Bhat, Thirumaleshwara N., Tan, Hui Ru, Lim, Poh Chong, Tripathy, Sudhiranjan, Chor, Eng Fong
Published in ECS journal of solid state science and technology (01.01.2016)
Published in ECS journal of solid state science and technology (01.01.2016)
Get full text
Journal Article
Fabrication and Performance of InAlN/GaN-on-Si MOSHEMTs with LaAlO 3 Gate Dielectric Using Gate-First CMOS Compatible Process at Low Thermal Budget
Bera, Milan Kumar, Liu, Yi, Kyaw, Lwin Min, Ngoo, Yi Jie, Singh, Sarab Preet, Chor, Eng Fong
Published in ECS transactions (20.03.2014)
Published in ECS transactions (20.03.2014)
Get full text
Journal Article
Low Thermal Budget Au-Free Hf-Based Ohmic Contacts on InAlN/GaN Heterostructures
Liu, Yi, Kyaw, Lwin Min, Bera, Milan Kumar, Singh, Sarab Preet, Ngoo, Yi Jie, Lo, Guo Qiang, Chor, Eng Fong
Published in ECS transactions (20.03.2014)
Published in ECS transactions (20.03.2014)
Get full text
Journal Article
Fabrication and Performance of InAlN/GaN-on-Si MOSHEMTs with LaAlO3 Gate Dielectric Using Gate-First CMOS Compatible Process at Low Thermal Budget
Bera, Milan Kumar, Liu, Yi, Kyaw, Lwin Min, Ngoo, Yi Jie, Singh, Sarab Preet, Chor, Eng Fong
Published in ECS transactions (01.01.2014)
Published in ECS transactions (01.01.2014)
Get full text
Journal Article
Gold-Free InAlN/GaN Schottky Gate HEMT On Si (111) Substrate with ZrO 2 Passivation
Kyaw, Lwin Min, Liu, Yi, Bera, Milan Kumar, Ngoo, Yi Jie, Tripathy, Sudhiranjan, Chor, Eng Fong
Published in ECS transactions (03.05.2013)
Published in ECS transactions (03.05.2013)
Get full text
Journal Article