On the Combined Effect of Silicon Oxide Thickness and Boron Implantation Under the Gate in MOSFET Dosimeters
Biasi, Giordano, Su, Fang-Yi, Al Sudani, Taghreed, Corde, Stephanie, Petasecca, Marco, Lerch, Michael L. F., Perevertaylo, Vladimir L., Jackson, Michael, Rosenfeld, Anatoly B.
Published in IEEE transactions on nuclear science (01.03.2020)
Published in IEEE transactions on nuclear science (01.03.2020)
Get full text
Journal Article