Enhanced zirconia oxide dielectric quality of germanium p-channel metal oxide semiconductor field effect transistor by in-situ low temperature treatment in atomic layer deposition process
Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Li, Ji-Syuan, Yi, Shih-Han
Published in Thin solid films (01.05.2020)
Published in Thin solid films (01.05.2020)
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Journal Article
Effects of pre- and post-microwave annealing treatments on pGe MOS device
Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Liu, Chia-Chien, Chien, Yu-Hsuan, Lee, Yao-Jen
Published in Surface & coatings technology (15.10.2021)
Published in Surface & coatings technology (15.10.2021)
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Journal Article
Oxygen diffusion barrier on interfacial layer formed with remote NH3 plasma treatment
Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Yeh, Hsin-I, Chu, Fu-Yang, Yang, Kai-Chun, Wu, Po-Chun, Hsieh, E-Ray
Published in Surface & coatings technology (15.10.2021)
Published in Surface & coatings technology (15.10.2021)
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Journal Article
Low EOT and oxide traps for p-substrate Ge MOS device with hafnium nitride interfacial layer
Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Hsu, Wen-Yen, Yi, Shih-Han, Lee, Yao-Jen
Published in Vacuum (01.09.2020)
Published in Vacuum (01.09.2020)
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Journal Article
Voltage stress induced interface states and hole trapping in germanium pMOSFETs with high-k gate dielectric and metal-gate electrode
Chiu, Fu-Chien, Chen, Wei-Chia, Wu, Jih-Huah, Chang-Liao, Kuei-Shu
Published in Materials science in semiconductor processing (15.03.2021)
Published in Materials science in semiconductor processing (15.03.2021)
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Journal Article
A green recyclable Li3VO4-pectin electrode exhibiting pseudocapacitive effect as an advanced anode for lithium-ion battery
Su, Yu-Hsuan, Chung, Chin-Yi, Chen, Yan-Ruei, Wu, Feng-Yu, Lin, Ya-Huei, Chi, Po-Wei, Wu, Phillip M., Paul, Tanmoy, Lin, Hwai-En, Chang-Liao, Kuei-Shu, Wang, Sea-Fue, Wu, Maw-Kuen
Published in Journal of energy storage (20.11.2023)
Published in Journal of energy storage (20.11.2023)
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Journal Article
Radiation effects and reliability characteristics of Ge pMOSFETs
Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Hong, Zi-Qin, Huang, Jiayi, Yi, Shih-Han, Liu, Guan-Ting, Chiu, Po-Chen, Li, Yan-Lin
Published in Microelectronic engineering (15.08.2019)
Published in Microelectronic engineering (15.08.2019)
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Journal Article
Effects of fluorine based double plasma treatment on electrical and reliability characteristics of Ge pMOSFETs
Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Li, Ji-Syuan, Yi, Shih-Han, Liu, Guan-Ting, Chiu, Po-Chen, Li, Yan-Lin
Published in Microelectronic engineering (15.07.2019)
Published in Microelectronic engineering (15.07.2019)
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Journal Article
Operation characteristics of Poly-Si nanowire charge-trapping flash memory devices with SiGe and Ge buried channels
Fang, Hsin-Kai, Chang-Liao, Kuei-Shu, Huang, Chien-Pang, Lee, Wei-Zhi
Published in Vacuum (01.06.2017)
Published in Vacuum (01.06.2017)
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Journal Article
Optimal process integration of gate insulator and a-Si layers in large-sized a-Si thin-film-transistor
Lee, Hao-Chieh, Chang-Liao, Kuei-Shu, Li, Yan-Lin
Published in Microelectronic engineering (01.11.2015)
Published in Microelectronic engineering (01.11.2015)
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Journal Article
Improved reliability of large-sized a-Si thin-film-transistor by back channel treatment in H2
Lee, Hao-Chieh, Chang-Liao, Kuei-Shu, Li, Yan-Lin
Published in Microelectronics and reliability (01.11.2015)
Published in Microelectronics and reliability (01.11.2015)
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Journal Article
Electrical characteristics of Ge buried channel FinFETs with interfacial layers treated by F/N/H-based plasma
Li, Yan-Lin, Chang-Liao, Kuei-Shu, Ku, Chao-Chen, Ruan, Dun-Bao, Huang, Chin-Hsiu, Hsu, Yi-Wen, Tsai, Shang-Fu, Yang, Meng-Ying, Wu, Wen-Fa
Published in Microelectronic engineering (25.06.2017)
Published in Microelectronic engineering (25.06.2017)
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Journal Article
SiO2 tunneling and Si3N4/HfO2 trapping layers formed with low temperature processes on gate-all-around junctionless charge-trapping flash memory devices
Fang, Hsin-Kai, Chang-Liao, Kuei-Shu, Cheng, Chia-Hsin, Lin, Po-Yao, Huang, Wen-Hsien, Shen, Chang-Hong, Shieh, Jia-Min
Published in Microelectronics and reliability (01.12.2018)
Published in Microelectronics and reliability (01.12.2018)
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Journal Article
A new erase method for scaled NAND flash memory device
Lin, Chan-Ching, Chang-Liao, Kuei-Shu, Huang, Tzung-Bin, Yu, Cheng-Jung, Ko, Hsueh-Chao
Published in Microelectronics and reliability (01.05.2017)
Published in Microelectronics and reliability (01.05.2017)
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Journal Article
Enhanced electrical characteristics of FinFET by rapid-thermal-and-laser annealing with suitable power
Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Li, Yan-Lin, Feng, Hao-Ting, Hsu, Yi-Wen, Huang, Chin-Hsiu, Tsai, Shang-Fu, Yang, Meng-Ying
Published in Microelectronic engineering (25.06.2017)
Published in Microelectronic engineering (25.06.2017)
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Journal Article
Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer
Li, Yan-Lin, Chang-Liao, Kuei-Shu, Chang, Yu-Wei, Huang, Tse-Jung, Li, Chen-Chien, Gu, Zhao-Chen, Chen, Po-Yen, Wu, Tzung-Yu, Huang, Jiayi, Chu, Fu-Chuan, Yi, Shih-Han
Published in Microelectronics and reliability (01.12.2017)
Published in Microelectronics and reliability (01.12.2017)
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Journal Article
Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
Huang, Jiayi, Chang-Liao, Kuei-Shu, Li, Chen-Chien, Li, Yan-Lin, Tsai, Chia-Chi, Ku, Chao-Chen, Chen, Po-Yen, Huang, Tse-Jung, Wu, Tzung-Yu, Chu, Fu-Chuan, Yi, Shih-Han
Published in Vacuum (01.06.2017)
Published in Vacuum (01.06.2017)
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Journal Article