Growth of epitaxially stabilized, non-cubic Gd^sub 2^O^sub 3^ on silicon(1?1?1) substrates
Moellers, M, Margenfeld, C, Wietler, TF, Osten, HJ
Published in Journal of crystal growth (15.12.2017)
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Published in Journal of crystal growth (15.12.2017)
Journal Article
Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy
Tetzlaff, D., Wietler, T.F., Bugiel, E., Osten, H.J.
Published in Journal of crystal growth (01.09.2013)
Published in Journal of crystal growth (01.09.2013)
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Conference Proceeding
Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(111)
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Conference Proceeding
Epitaxial growth and thermal stability of silicon layers on crystalline gadolinium oxide
Dargis, R., Fissel, A., Schwendt, D., Bugiel, E., Krügener, J., Wietler, T., Laha, A., Osten, H.J.
Published in Vacuum (21.10.2010)
Published in Vacuum (21.10.2010)
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Epitaxial growth of Gd sub(2O) sub(3) on surfactant-mediated grown Ge films on Si(0 0 1) substrates
Wietler, T F, Laha, A, Bugiel, E, Czernohorsky, M, Dargis, R, Fissel, A, Osten, HJ
Published in Solid-state electronics (01.08.2009)
Published in Solid-state electronics (01.08.2009)
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MBE growth and properties of supersaturated, carbon-containing silicon/germanium alloys on Si(001)
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Journal Article
Initial stages of praseodymium oxide film formation on Si( [formula omitted])
Müssig, H.-J., Da̧browski, J., Ignatovich, K., Liu, J.P., Zavodinsky, V., Osten, H.J.
Published in Surface science (20.04.2002)
Published in Surface science (20.04.2002)
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Growth of crystalline praseodymium oxide on silicon
Osten, H.J, Liu, J.P, Bugiel, E, Müssig, H.J, Zaumseil, P
Published in Journal of crystal growth (01.02.2002)
Published in Journal of crystal growth (01.02.2002)
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Epitaxial, high- K dielectrics on silicon: the example of praseodymium oxide
Osten, H.J., Liu, J.P., Müssig, H.-J., Zaumseil, P.
Published in Microelectronics and reliability (01.07.2001)
Published in Microelectronics and reliability (01.07.2001)
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Comparative analysis of minority carrier transport in npn bipolar transistors with Si, Si1-xGex, and Si1-yCy base layers
HEINEMANN, B, KNOLL, D, FISCHER, G. G, SCHLEY, P, OSTEN, H. J
Published in Thin solid films (03.07.2000)
Published in Thin solid films (03.07.2000)
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Conference Proceeding
Comparison of SiGe and SiGe:C heterojunction bipolar transistors
KNOLL, D, HEINEMANN, B, EHWALD, K.-E, TILLACK, B, SCHLEY, P, OSTEN, H. J
Published in Thin solid films (03.07.2000)
Published in Thin solid films (03.07.2000)
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Journal Article
Ternary SiGeC alloys: growth and properties of a new semiconducting material
Osten, H.Jörg, Kim, Myeongcheol, Lippert, G., Zaumseil, P.
Published in Thin solid films (15.02.1997)
Published in Thin solid films (15.02.1997)
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Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe
Osten, H.J., Rücker, H., Liu, J.P., Heinemann, B.
Published in Microelectronic engineering (01.05.2001)
Published in Microelectronic engineering (01.05.2001)
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Carbon-containing group IV heterostructures on Si: properties and device applications
Osten, H.J, Barth, R, Fischer, G, Heinemann, B, Knoll, D, Lippert, G, Rücker, H, Schley, P, Röpke, W
Published in Thin solid films (26.05.1998)
Published in Thin solid films (26.05.1998)
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