Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy
Tetzlaff, D., Wietler, T.F., Bugiel, E., Osten, H.J.
Published in Journal of crystal growth (01.09.2013)
Published in Journal of crystal growth (01.09.2013)
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CMOS integration of epitaxial Gd2O3 high-k gate dielectrics
GOTTLOB, H. D. B, ECHTERMEYER, T, OSTEN, H.-J, FISSEL, A, MOLLENHAUER, T, EFAVI, J. K, SCHMIDT, M, WAHLBRINK, T, LEMME, M. C, KURZ, H, CZERNOHORSKY, M, BUGIEL, E
Published in Solid-state electronics (01.06.2006)
Published in Solid-state electronics (01.06.2006)
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Photonic crystals for highly efficient silicon single junction solar cells
Krügener, J., Rienäcker, M., Schäfer, S., Sanchez, M., Wolter, S., Brendel, R., John, S., Osten, H.J., Peibst, R.
Published in Solar energy materials and solar cells (01.12.2021)
Published in Solar energy materials and solar cells (01.12.2021)
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Si-nanoclusters embedded into epitaxial rare earth oxides: Potential candidate for nonvolatile memory applications
Laha, Apurba, Bugiel, E., Fissel, A., Osten, H.J.
Published in Microelectronic engineering (01.12.2008)
Published in Microelectronic engineering (01.12.2008)
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Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(111)
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Integration of functional epitaxial oxides into silicon: from high- k application to nanostructures
Osten, H.J., Czernohorsky, M., Dargis, R., Laha, A., Kühne, D., Bugiel, E., Fissel, A.
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Engineering the interface between epitaxial lanthanide oxide thin films and Si substrates: a route towards tuning the electrical properties
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Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals
BADYLEVICH, M, SHAMUILIA, S, AFANAS'EV, V. V, STESMANS, A, LAHA, A, OSTEN, H. J, FISSEL, A
Published in Microelectronic engineering (01.12.2008)
Published in Microelectronic engineering (01.12.2008)
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Charge trapping in ultrathin Gd2O3 high-k dielectric
NAZAROV, A. N, GOMENIUK, Y. V, GOMENIUK, Y. Y, GOTTLOB, H. D. B, SCHMIDT, M, LEMME, M. C, CZEMOHORSKY, M, OSTEN, H. J
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Growth of crystalline praseodymium oxide on silicon
Osten, H.J, Liu, J.P, Bugiel, E, Müssig, H.J, Zaumseil, P
Published in Journal of crystal growth (01.02.2002)
Published in Journal of crystal growth (01.02.2002)
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Epitaxial growth of praseodymium oxide on silicon
Osten, H.J, Liu, J.P, Bugiel, E, Müssig, H.J, Zaumseil, P
Published in Materials science & engineering. B, Solid-state materials for advanced technology (19.12.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (19.12.2001)
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Comparison of SiGe and SiGe:C heterojunction bipolar transistors
KNOLL, D, HEINEMANN, B, EHWALD, K.-E, TILLACK, B, SCHLEY, P, OSTEN, H. J
Published in Thin solid films (03.07.2000)
Published in Thin solid films (03.07.2000)
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Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe
Osten, H.J., Rücker, H., Liu, J.P., Heinemann, B.
Published in Microelectronic engineering (01.05.2001)
Published in Microelectronic engineering (01.05.2001)
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Epitaxial multi-component rare earth oxide for high-K application
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Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy
FISSEL, A, DARGIS, R, BUGIEL, E, SCHWENDT, D, WIETLER, T, KRÜGENER, J, LAHA, A, OSTEN, H. J
Published in Thin solid films (26.02.2010)
Published in Thin solid films (26.02.2010)
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Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys
Hattab, A, Perrossier, J.L, Meyer, F, Barthula, M, Osten, H.J, Griesche, J
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
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Dopant diffusion control by adding carbon into Si and SiGe: principles and device application
Osten, H.J, Knoll, D, Rücker, H
Published in Materials science & engineering. B, Solid-state materials for advanced technology (19.12.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (19.12.2001)
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