Phonon behavior and interfacial stress in the strained (InAs) m/(GaAs) n ultrathin superlattices
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Conference Proceeding
MOMBE growth of GaSb and InAsSb using triethylstibine and triethylarsine
Kaneko, Tadaaki, Asahi, Hajime, Itani, Yasushi, Okuno, Yasutoshi, Gonda, Shun-ichi
Published in Journal of crystal growth (01.05.1991)
Published in Journal of crystal growth (01.05.1991)
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Conference Proceeding
High density of self-organized quantum dots formed in (GaP) n(InP)m short period superlattices grown on GaAs (N11)
KIM, S.-J, ASAHI, H, TAKEMOTO, M, NOH, J.-H, ASAMI, K, GONDA, S.-I
Published in Applied surface science (1997)
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Published in Applied surface science (1997)
Conference Proceeding
Electroreflectance study of AlxGa1-x-yInyP alloy
ASAMI, K, ASAHI, H, GONDA, S.-I, KAWAMURA, Y, TANAKA, H
Published in Solid state communications (01.04.1989)
Published in Solid state communications (01.04.1989)
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Surface diffusion lengths of Ga molecules during GaAs MOMBE (metalorganic molecular beam epitaxy) growth
Okuno, Yasutoshi, Asahi, Hajime, Kaneko, Tadaaki, Kang, Tae Won, Gonda, Shun-ichi
Published in Journal of crystal growth (01.10.1990)
Published in Journal of crystal growth (01.10.1990)
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Conference Proceeding
Gas source MEE growth of InGaAs/InP superlattices
Asahi, Hajime, Kohara, Teruaki, Soni, Ravi Kant, Takeyasu, Nobuyuki, Asami, Kumiko, Emura, Shuichi, Gonda, Shun-ichi
Published in Applied surface science (1992)
Published in Applied surface science (1992)
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Conference Proceeding
Optical properties of atomically controlled InGaAs/InP quantum well structures
Asahi, Hajime, Ijuin, Hachiro, Kohara, Teruaki, Asami, Kumiko, Watanabe, Hiromichi, Gonda, Shun-ichi
Published in Applied surface science (01.01.1994)
Published in Applied surface science (01.01.1994)
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Conference Proceeding
Gas source MEE (migration enhanced epitaxy) growth of InP
Takeyasu, Nobuyuki, Asahi, Hajime, Yu, Soon Jae, Asami, Kumiko, Kaneko, Tadaaki, Gonda, Shun-ichi
Published in Journal of crystal growth (01.05.1991)
Published in Journal of crystal growth (01.05.1991)
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Conference Proceeding
MOMBE (metalorganic molecular beam epitaxy) growth of InGaAlAsSb system on GaSb
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Conference Proceeding
Observations on rheed intensity oscillations during the growwth of GaSb and InAs by mombe
KANEKO, T, ASAHI, H, OKUNO, Y, KANG, T. W, GONDA, S.-I
Published in Journal of crystal growth (1990)
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Published in Journal of crystal growth (1990)
Conference Proceeding
XPS study of one-dimensional compounds: TiS3
Endo, Kazuhiro, Ihara, Hideo, Watanabe, Kazuhiro, Gonda, Shun-Ichi
Published in Journal of solid state chemistry (01.01.1982)
Published in Journal of solid state chemistry (01.01.1982)
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XPS study on valence band structures of transition-metal trisulfides, TiS3, NbS3, and TaS3
Endo, Kazuhiro, Ihara, Hideo, Watanabe, Kazuhiro, Gonda, Shun-Ichi
Published in Journal of solid state chemistry (01.01.1981)
Published in Journal of solid state chemistry (01.01.1981)
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Nitrogen doping into GaAs1−xPx using ionized beam in molecular beam epitaxy
Matsushima, Yuichi, Gonda, Shun-ichi, Makita, Yunosuke, Mukai, Seiji
Published in Journal of crystal growth (01.04.1978)
Published in Journal of crystal growth (01.04.1978)
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