Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications
Yoon, Jaesik, Lee, Joonmyoung, Choi, Hyejung, Park, Ju-Bong, Seong, Dong-jun, Lee, Wootae, Cho, Chunhum, Kim, Seonghyun, Hwang, Hyunsang
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Conference Proceeding
The effect of Sr concentration on resistive switching properties of La1−xSrxMnO3 films
Choi, Sun Gyu, Lee, Hong-Sub, Choi, Hyejung, Chung, Sung-Woong, Park, Hyung-Ho
Published in Thin solid films (01.02.2013)
Published in Thin solid films (01.02.2013)
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Conference Proceeding
Integrated all-organic 8 × 8 one transistor-one resistor (1T-1R) crossbar resistive switching memory array
Ji, Yongsung, Cha, An-Na, Lee, Sang-A, Bae, Sukang, Lee, Sang Hyun, Lee, Dong Su, Choi, Hyejung, Wang, Gunuk, Kim, Tae-Wook
Published in Organic electronics (01.02.2016)
Published in Organic electronics (01.02.2016)
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Journal Article
Improvement of interface quality by post-annealing on silicon nanowire MOSFET devices with multi-wire channels
Kim, Seonghyun, Jo, Minseok, Jung, Seungjae, Choi, Hyejung, Lee, Joonmyoung, Chang, Man, Cho, Chunhum, Hwang, Hyunsang
Published in Microelectronic engineering (01.03.2011)
Published in Microelectronic engineering (01.03.2011)
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Journal Article
Improvement of interface quality by post-annealing on silicon nanowire MOSFETdevices with multi-wire channels
KIM, Seonghyun, JO, Minseok, JUNG, Seungjae, CHOI, Hyejung, LEE, Joonmyoung, MAN CHANG, CHO, Chunhum, HWANG, Hyunsang
Published in Microelectronic engineering (01.03.2011)
Published in Microelectronic engineering (01.03.2011)
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Journal Article
Effect of metal ions on the switching performance of polyfluorene-based organic non-volatile memory devices
Kim, Tae-Wook, Oh, Seung-Hwan, Lee, Joonmyoung, Choi, Hyejung, Wang, Gunuk, Park, Jubong, Kim, Dong-Yu, Hwang, Hyunsang, Lee, Takhee
Published in Organic electronics (2010)
Published in Organic electronics (2010)
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The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applications
Lee, Joonmyoung, Choi, Hyejung, Seong, Dong-jun, Yoon, Jaesik, Park, Jubong, Jung, Seungjae, Lee, Wootae, Chang, Man, Cho, Chunhum, Hwang, Hyunsang
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Journal Article
Data retention characteristics of MANOS-type flash memory device with different metal gates at various levels of charge injection
Chang, Man, Kim, Tae-Wook, Lee, Joonmyoung, Jo, Minseok, Kim, Seonghyun, Jung, Seungjae, Choi, Hyejung, Lee, Takhee, Hwang, Hyunsang
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Conference Proceeding
Improvement of memory properties for MANOS-type nonvolatile memory devices with high-pressure wet vapor annealing
Chang, Man, Hasan, Musarrat, Jung, Seungjae, Park, Hokyung, Jo, Minseok, Choi, Hyejung, Kwon, Moonjae, Hwang, Hyunsang, Choi, Sangmoo
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Conference Proceeding
The impact of Al interfacial layer on resistive switching of La 0.7Sr 0.3MnO 3 for reliable ReRAM applications
Lee, Joonmyoung, Choi, Hyejung, Seong, Dong-jun, Yoon, Jaesik, Park, Jubong, Jung, Seungjae, Lee, Wootae, Chang, Man, Cho, Chunhum, Hwang, Hyunsang
Published in Microelectronic engineering (2009)
Published in Microelectronic engineering (2009)
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Journal Article
The impact of Al interfacial layer on resistive switching of La0.7Sro.3MnO3 for reliable ReRAM applications
LEE, Joonmyoung, CHOI, Hyejung, SEONG, Dong-Jun, YOON, Jaesik, PARK, Jubong, JUNG, Seungjae, LEE, Wootae, CHANG, Man, CHO, Chunhum, HWANG, Hyunsang
Published in Microelectronic engineering (2009)
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Published in Microelectronic engineering (2009)
Conference Proceeding