Group-III nitride substrate
Sumi, Tomoaki, Kitamoto, Akira, Yoshimura, Masashi, Okayama, Yoshio, Takino, Junichi, Mori, Yusuke, Imanishi, Masayuki
Year of Publication 30.07.2024
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Year of Publication 30.07.2024
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Manufacturing apparatus for a group-III nitride crystal comprising a raw material chamber and a nurturing chamber in which a group III-element oxide gas and a nitrogen element-containing gas react to produce a group-III nitride crystal on a seed substrate
Matsuno, Shunichi, Hoteida, Masayuki, Yoshimura, Masashi, Usami, Shigeyoshi, Takino, Junichi, Mori, Yusuke, Imanishi, Masayuki
Year of Publication 23.01.2024
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Year of Publication 23.01.2024
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Manufacturing method for a group-III nitride crystal that requires a flow amount of a carrier gas supplied into a raw material chamber at a temperature increase step satisfies two relational equations (I) and (II)
Matsuno, Shunichi, Yoshimura, Masashi, Usami, Shigeyoshi, Takino, Junichi, Mori, Yusuke, Imanishi, Masayuki
Year of Publication 02.01.2024
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Year of Publication 02.01.2024
Patent
Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrate
Sumi, Tomoaki, Kitamoto, Akira, Yoshimura, Masashi, Okayama, Yoshio, Takino, Junichi, Mori, Yusuke, Imanishi, Masayuki
Year of Publication 24.10.2023
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Year of Publication 24.10.2023
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GROUP-III NITRIDE SUBSTRATE
SUMI, Tomoaki, KITAMOTO, Akira, OKAYAMA, Yoshio, YOSHIMURA, Masashi, IMANISHI, Masayuki, TAKINO, Junichi, MORI, Yusuke
Year of Publication 12.10.2023
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Year of Publication 12.10.2023
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Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containng gas at a supersation ratio of greater than 1 and equal to or less than 5
Sumi, Tomoaki, Kitamoto, Akira, Yoshimura, Masashi, Takino, Junichi, Mori, Yusuke, Imanishi, Masayuki
Year of Publication 12.09.2023
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Year of Publication 12.09.2023
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Group-III nitride substrate
Sumi, Tomoaki, Kitamoto, Akira, Yoshimura, Masashi, Okayama, Yoshio, Takino, Junichi, Mori, Yusuke, Imanishi, Masayuki
Year of Publication 01.08.2023
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Year of Publication 01.08.2023
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MANUFACTURING METHOD FOR GROUP-III NITRIDE CRYSTAL
YOSHIMURA, Masashi, USAMI, Shigeyoshi, IMANISHI, Masayuki, TAKINO, Junichi, MATSUNO, Shunichi, MORI, Yusuke
Year of Publication 29.12.2022
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Year of Publication 29.12.2022
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METHOD OF MANUFACTURING AND GROUP III NITRIDE CRYSTAL
KITAMOTO, Akira, YOSHIMURA, Masashi, USAMI, Shigeyoshi, IMANISHI, Masayuki, TAKINO, Junichi, MORI, Yusuke
Year of Publication 13.10.2022
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Year of Publication 13.10.2022
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Group-III nitride substrate containing carbon at a surface region thereof
Sumi, Tomoaki, Kitamoto, Akira, Yoshimura, Masashi, Okayama, Yoshio, Takino, Junichi, Mori, Yusuke, Imanishi, Masayuki
Year of Publication 26.07.2022
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Year of Publication 26.07.2022
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