High-voltage, double-gate devices on silicon-on-insulator
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Journal Article
Conference Proceeding
Three-dimensional stacked MOS transistors by localized silicon epitaxial overgrowth
Zingg, R.P., Friedrich, J.A., Neudeck, G.W., Hofflinger, B.
Published in IEEE transactions on electron devices (01.06.1990)
Published in IEEE transactions on electron devices (01.06.1990)
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Journal Article