A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
Voinigescu, S.P., Maliepaard, M.C., Showell, J.L., Babcock, G.E., Marchesan, D., Schroter, M., Schvan, P., Harame, D.L.
Published in IEEE journal of solid-state circuits (01.09.1997)
Published in IEEE journal of solid-state circuits (01.09.1997)
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Journal Article
Scaling and technological limitations of 1/f noise and oscillator phase noise in SiGe HBTs
Guofu Niu, Jin Tang, Zhiming Feng, Joseph, A.J., Harame, D.L.
Published in IEEE transactions on microwave theory and techniques (01.02.2005)
Published in IEEE transactions on microwave theory and techniques (01.02.2005)
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Journal Article
Conference Proceeding
Impact of collector-base junction traps on low-frequency noise in high breakdown Voltage SiGe HBTs
Jin Tang, Guofu Niu, Joseph, A.J., Harame, D.L.
Published in IEEE transactions on electron devices (01.09.2004)
Published in IEEE transactions on electron devices (01.09.2004)
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Journal Article
Hot electron and hot hole degradation of UHV/CVD SiGe HBT's
Gogineni, U., Cressler, J.D., Niu, G., Harame, D.L.
Published in IEEE transactions on electron devices (01.07.2000)
Published in IEEE transactions on electron devices (01.07.2000)
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Journal Article
Simulation of SEE-induced charge collection in UHV/CVD SiGe HBTs
Niu, G., Cressler, J.D., Shoga, M., Jobe, K., Chu, P., Harame, D.L.
Published in IEEE transactions on nuclear science (01.12.2000)
Published in IEEE transactions on nuclear science (01.12.2000)
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Journal Article
On the optimization and design of SiGe HBT cascode low-noise amplifiers
Liang, Qingqing, Niu, Guofu, Cressler, John D., Taylor, Stewart, Harame, David L.
Published in Solid-state electronics (01.03.2005)
Published in Solid-state electronics (01.03.2005)
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Journal Article
The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs
Shiming Zhang, Guofu Niu, Cressler, J.D., Joseph, A.J., Freeman, G., Harame, D.L.
Published in IEEE transactions on electron devices (01.03.2002)
Published in IEEE transactions on electron devices (01.03.2002)
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Journal Article
Integrated RF components in a SiGe bipolar technology
Burghartz, J.N., Soyuer, M., Jenkins, K.A., Kies, M., Dolan, M., Stein, K.J., Malinowski, J., Harame, D.L.
Published in IEEE journal of solid-state circuits (01.09.1997)
Published in IEEE journal of solid-state circuits (01.09.1997)
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Journal Article
Collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBTs
Niu, G., Cressler, J.D., Gogineni, U., Harame, D.L.
Published in IEEE electron device letters (01.08.1998)
Published in IEEE electron device letters (01.08.1998)
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Journal Article
Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT's
Babcock, J.A., Cressler, J.D., Vempati, L.S., Clark, S.D., Jaeger, R.C., Harame, D.L.
Published in IEEE electron device letters (01.08.1995)
Published in IEEE electron device letters (01.08.1995)
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Journal Article
On the Challenges of SiGe HBTs in Advanced BiCMOS Technology Toward Half THz f MAX
Liu, Qizhi, Jain, Vibhor, Camillo-Castillo, Renata A, Pekarik, John J, Adkisson, James W., Joseph, Alvin, Harame, David L.
Published in ECS transactions (18.08.2016)
Published in ECS transactions (18.08.2016)
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Journal Article
A high-speed complementary silicon bipolar technology with 12-fJ power-delay product
Cressler, J.D., Warnock, J., Harame, D.L., Burghartz, J.N., Jenkins, K.A., Chuang, C.-T.
Published in IEEE electron device letters (01.11.1993)
Published in IEEE electron device letters (01.11.1993)
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Journal Article
Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS
Joseph, A.J., Dunn, J., Nowak, E., Harame, D.L., Jagannathan, B., Coolbaugh, D., Ahlgren, D., Magerlein, J., Lanzerotti, L., Feilchenfeld, N., St Onge, S.
Published in Proceedings of the IEEE (2005)
Published in Proceedings of the IEEE (2005)
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Journal Article
A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs
Qingqing Liang, Cressler, J.D., Guofu Niu, Yuan Lu, Freeman, G., Ahlgren, D.C., Malladi, R.M., Newton, K., Harame, D.L.
Published in IEEE transactions on microwave theory and techniques (01.11.2003)
Published in IEEE transactions on microwave theory and techniques (01.11.2003)
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Journal Article
RF linearity characteristics of SiGe HBTs
Guofu Niu, Qingqing Liang, Cressler, J.D., Webster, C.S., Harame, D.L.
Published in IEEE transactions on microwave theory and techniques (01.09.2001)
Published in IEEE transactions on microwave theory and techniques (01.09.2001)
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Journal Article
SiGe heterojunctions: devices and applications
Arienzo, Maurizio, Comfort, James H., Crabbé, Emmanuel F., Harame, David L., Iyer, Subramanian S., Kesan, Vijay P., Meyerson, Bernard S., Patton, Gary L., Stork, Johannes M.C., Sun, Yuan-Chen
Published in ESSDERC '92: 22nd European Solid State Device Research conference (1992)
Published in ESSDERC '92: 22nd European Solid State Device Research conference (1992)
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Conference Proceeding