Search Results - "Guerrieri, S.D." :: K.UTB vyhledávací portál

Self-Consistent Electrothermal Modeling of Class A, AB, and B Power GaN HEMTs Under Modulated RF Excitation

by Camarchia, V., Cappelluti, F., Pirola, M., Guerrieri, S.D., Ghione, G.
Published in IEEE transactions on microwave theory and techniques (01.09.2007)

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A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation

by Bonani, F., Guerrieri, S.D., Ghione, G., Pirola, M.
Published in IEEE transactions on electron devices (01.05.2001)

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Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications

by Bonani, F., Guerrieri, S.D., Ghione, G.
Published in IEEE transactions on electron devices (01.03.2003)

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Self-consistent coupled carrier transport full-wave EM analysis of semiconductor traveling-wave devices

by Bertazzi, F., Cappelluti, F., Guerrieri, S.D., Bonani, F., Ghione, G.
Published in IEEE transactions on microwave theory and techniques (01.04.2006)

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