Specific contact resistivity of n-type Si and Ge M-S and M-I-S contacts
Jiseok Kim, Oldiges, Phillip J., Hui-feng Li, Niimi, Hiroaki, Raymond, Mark, Zeitzoff, Peter, Kamineni, Vimal, Adusumilli, Praneet, Chengyu Niu, Chafik, Fadoua
Published in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2015)
Published in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2015)
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Conference Proceeding
Journal Article
Integrated dual SPE processes with low contact resistivity for future CMOS technologies
Heng Wu, Soon-Cheon Seo, Chengyu Niu, Wei Wang, Tsutsui, Gen, Gluschenkov, Oleg, Zuoguang Liu, Petrescu, Alexandru, Carr, Adra, Choi, Sam, Tsai, Stan, Chanro Park, Seshadri, Indira, Desilva, Anuja, Arceo, Abraham, Yang, George, Sankarapandian, Muthumanickam, Prindle, Chris, Akarvardar, Kerem, Durfee, Curtis, Jie Yang, Adusumilli, Praneet, Miao, Bruce, Strane, Jay, Kleemeier, Walter, Raymond, Mark, Choi, Kisik, Fee-li Lie, Yamashita, Tenko, Knorr, Andreas, Gupta, Dinesh, Dechao Guo, Divakaruni, Rama, Huiming Bu, Khare, Mukesh
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
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Conference Proceeding
External Resistance Reduction by Nanosecond Laser Anneal in Si/SiGe CMOS Technology
Gluschenkov, Oleg, Wu, Heng, Brew, Kevin, Niu, Chengyu, Yu, Lan, Sulehria, Yasir, Choi, Samuel, Durfee, Curtis, Demarest, James, Carr, Adra, Chen, Shaoyin, Willis, Jim, Thanigaivelan, Thirumal, Lie, Fee-li, Kleemeier, Walter, Guo, Dechao
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
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Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
Tsutsui, Gen, Ruqiang Bao, Kwan-yong Lim, Robison, Robert R., Vega, Reinaldo A., Jie Yang, Zuoguang Liu, Miaomiao Wang, Gluschenkov, Oleg, Chun Wing Yeung, Watanabe, Koji, Bentley, Steven, Niimi, Hiroaki, Liu, Derrick, Huimei Zhou, Siddiqui, Shariq, Hoon Kim, Galatage, Rohit, Venigalla, Rajasekhar, Raymond, Mark, Adusumilli, Praneet, Mochizuki, Shogo, Devarajan, Thamarai S., Miao, Bruce, Bei Liu, Greene, Andrew, Shearer, Jeffrey, Montanini, Pietro, Strane, Jay W., Prindle, Christopher, Miller, Eric R., Fronheiser, Jody, Niu, Chengyu C., Kisup Chung, Kelly, James J., Jagannathan, Hemanth, Kanakasabapathy, Sivananda, Karve, Gauri, Fee Li Lie, Oldiges, Philip, Narayanan, Vijay, Hook, Terence B., Knorr, Andreas, Gupta, Dinesh, Guo, Dechao, Divakaruni, Rama, Huiming Bu, Khare, Mukesh
Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01.12.2016)
Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01.12.2016)
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